Abstract
Electrical activity of tilt and twist Grain Boundaries (GBs) in silicon ribbons grown with the edge-defined film-fed growth (EFG) technique and bicrystalline silicon was studied. It has been shown that electrical behaviour of the GBs studied depends on the crystallographic structure of boundaries, namely on their type (tilt or twist) and extent of their deviation from special orientations (weakly-deviated or random). It was found that distinctions in electrical activity of boundaries are dependent on distribution of bob deep traps at GB plane (continuous or discontinuous) and dopants around the boundary `core'.
| Original language | English |
|---|---|
| Pages (from-to) | 15-20 |
| Number of pages | 6 |
| Journal | Solid State Phenomena |
| Volume | 67 |
| DOIs | |
| State | Published - 1 Jan 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1998 5th International Conference on Polycrystalline Semiconductors (POLYSE) - Bulk Materials, Thin Films and Devices - - Schwabisch Gmund, Ger Duration: 13 Sep 1998 → 18 Sep 1998 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- General Materials Science
- Condensed Matter Physics