Abstract
Liquid Phase Epitaxy (LPE) layers were doped during growth. The growth
method was horizontal sliding in semiclosed hydrogen atmosphere. The
dopants were copper for p-type layers and gallium for n-type layers.The
Two Carrier Model was employed to analyse the results. By this analysis,
hole concentration and mobility and electron concentration and mobility
were obtained. The transmission infrared spectrum of these layers was
examined in the range of 2 to 25 microns. It was demonstrated that the
control of the type and carrier concentration can be achieved by doping
during growth. Possible application of this work is the ability of
production of p-n heterojunctions during growth. The effect of shift in
lambdaco to short wavelengths by Burstein Shift can be used as intrinsic
infra-red windows. The strong dependence of reflection on wavelengths
and carrier concentration demonstrated in this work, can be used in
development of infrared waveguides.
| Original language | English |
|---|---|
| Journal | Ph.D. Thesis Israel Atomic Energy Commission, Yavneh. Nuclear Research Center. |
| State | Published - 1 May 1987 |
| Externally published | Yes |
Keywords
- Cadmium Tellurides
- Doped Crystals
- Hole Distribution (Electronics)
- Hole Mobility
- Liquid Phase Epitaxy
- Mercury Tellurides
- Electrical Properties
- Energy Gaps (Solid State)
- Optical Properties
- Semiconductor Junctions