Electrical and optical properties of Hg/sub 1-x/Cd/sub x/Te doped layers grown by Liquid Phase Epitaxy (LPE)

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Abstract

Liquid Phase Epitaxy (LPE) layers were doped during growth. The growth method was horizontal sliding in semiclosed hydrogen atmosphere. The dopants were copper for p-type layers and gallium for n-type layers.The Two Carrier Model was employed to analyse the results. By this analysis, hole concentration and mobility and electron concentration and mobility were obtained. The transmission infrared spectrum of these layers was examined in the range of 2 to 25 microns. It was demonstrated that the control of the type and carrier concentration can be achieved by doping during growth. Possible application of this work is the ability of production of p-n heterojunctions during growth. The effect of shift in lambdaco to short wavelengths by Burstein Shift can be used as intrinsic infra-red windows. The strong dependence of reflection on wavelengths and carrier concentration demonstrated in this work, can be used in development of infrared waveguides.
Original languageEnglish
JournalPh.D. Thesis Israel Atomic Energy Commission, Yavneh. Nuclear Research Center.
StatePublished - 1 May 1987
Externally publishedYes

Keywords

  • Cadmium Tellurides
  • Doped Crystals
  • Hole Distribution (Electronics)
  • Hole Mobility
  • Liquid Phase Epitaxy
  • Mercury Tellurides
  • Electrical Properties
  • Energy Gaps (Solid State)
  • Optical Properties
  • Semiconductor Junctions

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