Electrical conductivity and minority carrier diffusion in thermally oxidized PbTe thin films

E. Shufer; Z. Dashevsky; V. Kasiyan; E. Flitsiyan; L. Chernyak; K. Gartsman

doi:10.1016/j.physb.2009.11.004

Electrical conductivity and minority carrier diffusion in thermally oxidized PbTe thin films

E. Shufer, Z. Dashevsky, V. Kasiyan, E. Flitsiyan, L. Chernyak, K. Gartsman

Department of Materials Engineering

Research output: Contribution to journal › Review article › peer-review

10 Scopus citations

Abstract

Thermally oxidized 0.1 and 1 μm thick n-type PbTe:In films were studied in this work. Two main processes induced during the thermal treatment in oxygen atmosphere were identified. These are the formation of an oxide phase on the surface and generation of acceptor states of oxygen along grain boundaries inside a film. The latter process causes inversion of the type of electrical conductivity in PbTe from n to p. Electron beam-induced current (EBIC) measurements of minority electron diffusion length in oxidized 0.1 μm thick PbTe:In film showed diffusion length increase with increasing temperature similar to the wide band gap semiconductors.

Original language	English
Pages (from-to)	1058-1061
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	405
Issue number	4
DOIs	https://doi.org/10.1016/j.physb.2009.11.004
State	Published - 15 Feb 2010

Keywords

EBIC effect
Lead telluride film
Thermal oxidation
Transport properties

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.physb.2009.11.004

Cite this

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title = "Electrical conductivity and minority carrier diffusion in thermally oxidized PbTe thin films",

abstract = "Thermally oxidized 0.1 and 1 μm thick n-type PbTe:In films were studied in this work. Two main processes induced during the thermal treatment in oxygen atmosphere were identified. These are the formation of an oxide phase on the surface and generation of acceptor states of oxygen along grain boundaries inside a film. The latter process causes inversion of the type of electrical conductivity in PbTe from n to p. Electron beam-induced current (EBIC) measurements of minority electron diffusion length in oxidized 0.1 μm thick PbTe:In film showed diffusion length increase with increasing temperature similar to the wide band gap semiconductors.",

keywords = "EBIC effect, Lead telluride film, Thermal oxidation, Transport properties",

author = "E. Shufer and Z. Dashevsky and V. Kasiyan and E. Flitsiyan and L. Chernyak and K. Gartsman",

note = "Funding Information: This research was partially supported by the Israeli Ministry of Defense and NATO (SfP 981939; CLG 983122).",

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doi = "10.1016/j.physb.2009.11.004",

language = "English",

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TY - JOUR

T1 - Electrical conductivity and minority carrier diffusion in thermally oxidized PbTe thin films

AU - Shufer, E.

AU - Dashevsky, Z.

AU - Kasiyan, V.

AU - Flitsiyan, E.

AU - Chernyak, L.

AU - Gartsman, K.

N1 - Funding Information: This research was partially supported by the Israeli Ministry of Defense and NATO (SfP 981939; CLG 983122).

PY - 2010/2/15

Y1 - 2010/2/15

N2 - Thermally oxidized 0.1 and 1 μm thick n-type PbTe:In films were studied in this work. Two main processes induced during the thermal treatment in oxygen atmosphere were identified. These are the formation of an oxide phase on the surface and generation of acceptor states of oxygen along grain boundaries inside a film. The latter process causes inversion of the type of electrical conductivity in PbTe from n to p. Electron beam-induced current (EBIC) measurements of minority electron diffusion length in oxidized 0.1 μm thick PbTe:In film showed diffusion length increase with increasing temperature similar to the wide band gap semiconductors.

AB - Thermally oxidized 0.1 and 1 μm thick n-type PbTe:In films were studied in this work. Two main processes induced during the thermal treatment in oxygen atmosphere were identified. These are the formation of an oxide phase on the surface and generation of acceptor states of oxygen along grain boundaries inside a film. The latter process causes inversion of the type of electrical conductivity in PbTe from n to p. Electron beam-induced current (EBIC) measurements of minority electron diffusion length in oxidized 0.1 μm thick PbTe:In film showed diffusion length increase with increasing temperature similar to the wide band gap semiconductors.

KW - EBIC effect

KW - Lead telluride film

KW - Thermal oxidation

KW - Transport properties

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U2 - 10.1016/j.physb.2009.11.004

DO - 10.1016/j.physb.2009.11.004

M3 - Review article

AN - SCOPUS:73749088332

SN - 0921-4526

VL - 405

SP - 1058

EP - 1061

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 4

ER -

Electrical conductivity and minority carrier diffusion in thermally oxidized PbTe thin films

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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