Abstract
As part of our ongoing research program to produce semiconductor devices based on C60 thin films, we report here on our first attempts at the intercalative doping of C60 thin films through the diffusion of metals. Two techniques were employed: (a) chemically induced counter electrodiffusion of Cu and I2 into a C60 matrix and (b) Au diffusion under the action of an external electric field.
Original language | English |
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Pages (from-to) | 493-496 |
Number of pages | 4 |
Journal | Physics of the Solid State |
Volume | 44 |
Issue number | 3 |
DOIs | |
State | Published - 1 Mar 2002 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics