Electrodiffusion phenomena in C60 thin films

E. A. Katz; D. Faiman; S. M. Tuladhar; S. Shtutina; N. Froumin; M. Polak

doi:10.1134/1.1462684

Electrodiffusion phenomena in C₆₀ thin films

E. A. Katz, D. Faiman, S. M. Tuladhar, S. Shtutina, N. Froumin, M. Polak

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

As part of our ongoing research program to produce semiconductor devices based on C₆₀ thin films, we report here on our first attempts at the intercalative doping of C₆₀ thin films through the diffusion of metals. Two techniques were employed: (a) chemically induced counter electrodiffusion of Cu and I₂ into a C₆₀ matrix and (b) Au diffusion under the action of an external electric field.

Original language	English
Pages (from-to)	493-496
Number of pages	4
Journal	Physics of the Solid State
Volume	44
Issue number	3
DOIs	https://doi.org/10.1134/1.1462684
State	Published - 1 Mar 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Electrodiffusion phenomena in C60 thin films",

abstract = "As part of our ongoing research program to produce semiconductor devices based on C60 thin films, we report here on our first attempts at the intercalative doping of C60 thin films through the diffusion of metals. Two techniques were employed: (a) chemically induced counter electrodiffusion of Cu and I2 into a C60 matrix and (b) Au diffusion under the action of an external electric field.",

author = "Katz, {E. A.} and D. Faiman and Tuladhar, {S. M.} and S. Shtutina and N. Froumin and M. Polak",

note = "Funding Information: ACKNOWLEDGMENTS This work was partly supported by the Israel Ministry of National Infrastructures. E.A.K. also thanks the financial support of the Israel Ministry of Immigrant Absorption. S.M.T. thanks the Albert Katz School (for Desert Studies) and the Bonna Terra Foundation.",

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AU - Froumin, N.

AU - Polak, M.

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PY - 2002/3/1

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N2 - As part of our ongoing research program to produce semiconductor devices based on C60 thin films, we report here on our first attempts at the intercalative doping of C60 thin films through the diffusion of metals. Two techniques were employed: (a) chemically induced counter electrodiffusion of Cu and I2 into a C60 matrix and (b) Au diffusion under the action of an external electric field.

AB - As part of our ongoing research program to produce semiconductor devices based on C60 thin films, we report here on our first attempts at the intercalative doping of C60 thin films through the diffusion of metals. Two techniques were employed: (a) chemically induced counter electrodiffusion of Cu and I2 into a C60 matrix and (b) Au diffusion under the action of an external electric field.

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Electrodiffusion phenomena in C₆₀ thin films

Abstract

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