Electroluminescence from GaN-polymer heterojunction

Inorganic and organic semiconductor devices are generally viewed as distinct and separate technologies. Herein we report a hybrid inorganicorganic light-emitting device employing the use of an air stable polymer, Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction, avoiding the use of p-type GaN, which is difficult to grow, being prone to the complex and expensive fabrication techniques that characterises it. IV characteristics of the GaNpolymer heterojunction fabricated by us exhibits excellent rectification. The luminescence onset voltage is typically about 810 V. The device emits yellowish white electroluminescence with CIE coordinates (0.42, 0.44).