Electroluminescence from single nanowires by tunnel injection: An experimental study

Mariano A. Zimmler; Jiming Bao; Ilan Shalish; Wei Yi; Joonah Yoon; Venkatesh Narayanamurti; Federico Capasso

doi:10.1088/0957-4484/18/23/235205

Electroluminescence from single nanowires by tunnel injection: An experimental study

Mariano A. Zimmler, Jiming Bao, Ilan Shalish, Wei Yi, Joonah Yoon, Venkatesh Narayanamurti, Federico Capasso

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.

Original language	English
Article number	235205
Journal	Nanotechnology
Volume	18
Issue number	23
DOIs	https://doi.org/10.1088/0957-4484/18/23/235205
State	Published - 13 Jun 2007
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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abstract = "We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.",

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AU - Zimmler, Mariano A.

AU - Bao, Jiming

AU - Shalish, Ilan

AU - Yi, Wei

AU - Yoon, Joonah

AU - Narayanamurti, Venkatesh

AU - Capasso, Federico

PY - 2007/6/13

Y1 - 2007/6/13

N2 - We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.

AB - We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.

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Electroluminescence from single nanowires by tunnel injection: An experimental study

Abstract

ASJC Scopus subject areas

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