Electroluminescence from single nanowires by tunnel injection: An experimental study

Mariano A. Zimmler, Jiming Bao, Ilan Shalish, Wei Yi, Joonah Yoon, Venkatesh Narayanamurti, Federico Capasso

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.

Original languageEnglish
Article number235205
Issue number23
StatePublished - 13 Jun 2007
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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