Electroluminescence from single nanowires by tunnel injection: An experimental study

Mariano A. Zimmler, Jiming Bao, Ilan Shalish, Wei Yi, Joonah Yoon, Venkatesh Narayanamurti, Federico Capasso

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.

Original languageEnglish
Article number235205
JournalNanotechnology
Volume18
Issue number23
DOIs
StatePublished - 13 Jun 2007
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry (all)
  • Materials Science (all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Electroluminescence from single nanowires by tunnel injection: An experimental study'. Together they form a unique fingerprint.

Cite this