Electron beam-induced absorption modulation imaging of strained In 0.2Ga0.8As/GaAs multiple quantum wells

D. H. Rich; K. Rammohan; Y. Tang; H. T. Lin; J. Maserjian; F. J. Grunthaner; A. Larsson; S. I. Borenstain

doi:10.1063/1.110783

Electron beam-induced absorption modulation imaging of strained In _0.2Ga_0.8As/GaAs multiple quantum wells

D. H. Rich, K. Rammohan, Y. Tang, H. T. Lin, J. Maserjian, F. J. Grunthaner, A. Larsson, S. I. Borenstain

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have examined the effects of electron-hole plasma generation on excitonic absorption phenomena in nipi-doped In_0.2Ga _0.8As/GaAs multiple quantum wells (MQWs) using a novel technique called electron beam-induced absorption modulation imaging. The electron-hole plasma is generated by a high-energy electron beam in a scanning electron microscope and is used as a probe to study the MQW absorption modulation. The influence of structural defects on the diffusive transport of carriers is imaged with a μm-scale resolution.

Original language	English
Pages (from-to)	394-396
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	3
DOIs	https://doi.org/10.1063/1.110783
State	Published - 1 Dec 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{a676b82aebc74a9b86c03dbf17faf612,

title = "Electron beam-induced absorption modulation imaging of strained In 0.2Ga0.8As/GaAs multiple quantum wells",

abstract = "We have examined the effects of electron-hole plasma generation on excitonic absorption phenomena in nipi-doped In0.2Ga 0.8As/GaAs multiple quantum wells (MQWs) using a novel technique called electron beam-induced absorption modulation imaging. The electron-hole plasma is generated by a high-energy electron beam in a scanning electron microscope and is used as a probe to study the MQW absorption modulation. The influence of structural defects on the diffusive transport of carriers is imaged with a μm-scale resolution.",

author = "Rich, {D. H.} and K. Rammohan and Y. Tang and Lin, {H. T.} and J. Maserjian and Grunthaner, {F. J.} and A. Larsson and Borenstain, {S. I.}",

year = "1993",

month = dec,

day = "1",

doi = "10.1063/1.110783",

language = "English",

volume = "63",

pages = "394--396",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Electron beam-induced absorption modulation imaging of strained In 0.2Ga0.8As/GaAs multiple quantum wells

AU - Rich, D. H.

AU - Rammohan, K.

AU - Tang, Y.

AU - Lin, H. T.

AU - Maserjian, J.

AU - Grunthaner, F. J.

AU - Larsson, A.

AU - Borenstain, S. I.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - We have examined the effects of electron-hole plasma generation on excitonic absorption phenomena in nipi-doped In0.2Ga 0.8As/GaAs multiple quantum wells (MQWs) using a novel technique called electron beam-induced absorption modulation imaging. The electron-hole plasma is generated by a high-energy electron beam in a scanning electron microscope and is used as a probe to study the MQW absorption modulation. The influence of structural defects on the diffusive transport of carriers is imaged with a μm-scale resolution.

AB - We have examined the effects of electron-hole plasma generation on excitonic absorption phenomena in nipi-doped In0.2Ga 0.8As/GaAs multiple quantum wells (MQWs) using a novel technique called electron beam-induced absorption modulation imaging. The electron-hole plasma is generated by a high-energy electron beam in a scanning electron microscope and is used as a probe to study the MQW absorption modulation. The influence of structural defects on the diffusive transport of carriers is imaged with a μm-scale resolution.

UR - http://www.scopus.com/inward/record.url?scp=6144275836&partnerID=8YFLogxK

U2 - 10.1063/1.110783

DO - 10.1063/1.110783

M3 - Article

AN - SCOPUS:6144275836

SN - 0003-6951

VL - 63

SP - 394

EP - 396

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Electron beam-induced absorption modulation imaging of strained In _0.2Ga_0.8As/GaAs multiple quantum wells

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