Electron-beam-induced effects on CuInS2 surfaces

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6 Scopus citations


A variety of processes occurring on a single-crystal surface of CuInS2 subjected to electron bombardment were observed and monitored using Auger electron spectroscopy. Quantitative characterization of elemental relative concentrations (copper, indium, sulphur and oxygen) as a function of bombardment time seems to indicate two major beam-induced phenomena. Thus, when we started with a non-stoichiometric copper-rich surface, the final product had the composition Cu2O·In2O3; this was produced in a vacuum of 10-8 Torr by 70 min of 3.5 μA 3 kV electron bombardment, which gradually induced both S-O interchange and indium diffusion. Scanning Auger studies of the bombarded surface revealed an accumulation of carbon surrounding the oxygen-rich region. This seems to indicate that CO from the residual gas is involved in the processes.

Original languageEnglish
Pages (from-to)345-351
Number of pages7
JournalThin Solid Films
Issue number3
StatePublished - 23 Apr 1982

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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