Electron-beam-induced effects on CuInS2 surfaces

M. Polak

doi:10.1016/0040-6090(82)90393-5

Electron-beam-induced effects on CuInS₂ surfaces

M. Polak

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A variety of processes occurring on a single-crystal surface of CuInS₂ subjected to electron bombardment were observed and monitored using Auger electron spectroscopy. Quantitative characterization of elemental relative concentrations (copper, indium, sulphur and oxygen) as a function of bombardment time seems to indicate two major beam-induced phenomena. Thus, when we started with a non-stoichiometric copper-rich surface, the final product had the composition Cu₂O·In₂O₃; this was produced in a vacuum of 10^-8 Torr by 70 min of 3.5 μA 3 kV electron bombardment, which gradually induced both S-O interchange and indium diffusion. Scanning Auger studies of the bombarded surface revealed an accumulation of carbon surrounding the oxygen-rich region. This seems to indicate that CO from the residual gas is involved in the processes.

Original language	English
Pages (from-to)	345-351
Number of pages	7
Journal	Thin Solid Films
Volume	90
Issue number	3
DOIs	https://doi.org/10.1016/0040-6090(82)90393-5
State	Published - 23 Apr 1982

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(82)90393-5

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title = "Electron-beam-induced effects on CuInS2 surfaces",

abstract = "A variety of processes occurring on a single-crystal surface of CuInS2 subjected to electron bombardment were observed and monitored using Auger electron spectroscopy. Quantitative characterization of elemental relative concentrations (copper, indium, sulphur and oxygen) as a function of bombardment time seems to indicate two major beam-induced phenomena. Thus, when we started with a non-stoichiometric copper-rich surface, the final product had the composition Cu2O·In2O3; this was produced in a vacuum of 10-8 Torr by 70 min of 3.5 μA 3 kV electron bombardment, which gradually induced both S-O interchange and indium diffusion. Scanning Auger studies of the bombarded surface revealed an accumulation of carbon surrounding the oxygen-rich region. This seems to indicate that CO from the residual gas is involved in the processes.",

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N2 - A variety of processes occurring on a single-crystal surface of CuInS2 subjected to electron bombardment were observed and monitored using Auger electron spectroscopy. Quantitative characterization of elemental relative concentrations (copper, indium, sulphur and oxygen) as a function of bombardment time seems to indicate two major beam-induced phenomena. Thus, when we started with a non-stoichiometric copper-rich surface, the final product had the composition Cu2O·In2O3; this was produced in a vacuum of 10-8 Torr by 70 min of 3.5 μA 3 kV electron bombardment, which gradually induced both S-O interchange and indium diffusion. Scanning Auger studies of the bombarded surface revealed an accumulation of carbon surrounding the oxygen-rich region. This seems to indicate that CO from the residual gas is involved in the processes.

AB - A variety of processes occurring on a single-crystal surface of CuInS2 subjected to electron bombardment were observed and monitored using Auger electron spectroscopy. Quantitative characterization of elemental relative concentrations (copper, indium, sulphur and oxygen) as a function of bombardment time seems to indicate two major beam-induced phenomena. Thus, when we started with a non-stoichiometric copper-rich surface, the final product had the composition Cu2O·In2O3; this was produced in a vacuum of 10-8 Torr by 70 min of 3.5 μA 3 kV electron bombardment, which gradually induced both S-O interchange and indium diffusion. Scanning Auger studies of the bombarded surface revealed an accumulation of carbon surrounding the oxygen-rich region. This seems to indicate that CO from the residual gas is involved in the processes.

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DO - 10.1016/0040-6090(82)90393-5

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EP - 351

JO - Thin Solid Films

JF - Thin Solid Films

IS - 3

ER -

Electron-beam-induced effects on CuInS₂ surfaces

Abstract

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