@article{0bcb90e79a7944a2acbdafad0786ac09,
title = "Electron-phonon interaction and cyclotron resonance in two-dimensional electron gas",
abstract = "Results for the influence of electron-phonon interaction on the cyclotron effective mass and the resonance linewidth in a two-dimensional electron gas are presented. The temperature and magnetic field dependence is studied and the existence of quantum oscillations is demonstrated. It is shown that the relevant phonon frequency in typical MOS inversion layers is very small so that magneto-transport properties are temperature dependent even at a few degrees Kelvin. Results are consistent with the observed temperature, magnetic field and frequency dependence in Si(100) inversion layers.",
author = "B. Horovitz and A. Madhukar",
note = "Funding Information: THE AIM OF THIS PAJ{\textquoteright}ER is to present some results and considerations of the influence of electron—phonon interaction on the magneto-optic properties of two-dimensional electron gases. Experimental realization and study \[1\]of two-dimensional charged gases has been found mostly in the inversion/accumulation layers created in the semiconductor at the semiconductor— oxide interface of a metal—oxide—semiconductor (MOS) sandwich. Most such studies are based on inversion layers in silicon, although a few isolated studies on compound semiconductors have also been reported. It has been noted that the ability to continuously vary the carrier density, along with usual parameters like temperature, applied magnetic field, etc. affords a rather unique opportunity for the study of basic interaction phenomena in two dimensions. However, the knowledge gained from such studies depends, amongst other things, upon the use of appropriate theoretical formulation for the interpretation of the particular experiment \[2\].Of the two basic interactions intrinsic to such a system, namely electron—electron and electron—phonon, a considerable emphasis has been placed upon studies involving only the former, to the neglect of the latter. To a large extent this has been motivated by the expected and claimed dominance of the e—e interaction over the electron—phonon interaction in silicon inversion layers, although no defmitive evidence for this has been presented. On the contrary, extensions of certain well known results of Fermi liquid * Work supported by AFOSR (Contract No. AFSOR78-3 530), and in part by ONR (Contract No.",
year = "1979",
month = jan,
day = "1",
doi = "10.1016/0038-1098(79)90731-2",
language = "English",
volume = "32",
pages = "695--698",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Ltd.",
number = "8",
}