Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies

Anatoly I. Kovalev; D. L. Wainstein; D. I. Tetelbaum; A. N. Mikhailov; Y. Golan; Y. Lifshitz; A. Berman; P. Basa; Zs J. Horvath

doi:10.1504/IJNP.2008.017616

Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies

Anatoly I. Kovalev, D. L. Wainstein, D. I. Tetelbaum, A. N. Mikhailov, Y. Golan, Y. Lifshitz, A. Berman, P. Basa, Zs J. Horvath

Research output: Contribution to journal › Article › peer-review

Abstract

The electron spectroscopy techniques (X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES), High Resolution Electron Energy Losses Spectroscopy (HREELS), EELFS) were used for characterisation of semiconductor nanocrystals (Si, PbS, CdS) formed by various technologies: Si ion implantation in Al₂O₃ matrix and annealing; Si-rich multilayered SiN_X Low Pressure Chemical Vapour Deposition (LPCVD); PbS and ZnS nanocrystals on Polydiacetylene (PDA) Langmuir-Blodget polymer films. The chemical, phase and atomic structure non-uniformity were determined using depth profiling techniques. The peculiarities of the ‘matrix-nanocrystal’ interface atomic and electronic structure, especially for nanocrystals were determined from analysis of XPS chemical shifts and vibrational spectra. The accommodation strains in the Si-nc:AL, O₃ system were determined by EELFS. The comparison of electron spectroscopy methods and other techniques for nanocrystals investigations (PL, HR-TEM, ellipsometry) is made.

Original language	English
Pages (from-to)	14-31
Number of pages	18
Journal	International Journal of Nanoparticles
Volume	1
Issue number	1
DOIs	https://doi.org/10.1504/IJNP.2008.017616
State	Published - 1 Jan 2008

Keywords

atomic structure
auger electron spectroscopy
depth profiling
electron energy losses fine structure spectroscopy
electronic structure
high resolution electron energy losses spectroscopy
semiconductor nanocrystals
surface
x-ray photoelectron spectroscopy

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanical Engineering

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title = "Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies",

abstract = "The electron spectroscopy techniques (X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES), High Resolution Electron Energy Losses Spectroscopy (HREELS), EELFS) were used for characterisation of semiconductor nanocrystals (Si, PbS, CdS) formed by various technologies: Si ion implantation in Al2O3 matrix and annealing; Si-rich multilayered SiNX Low Pressure Chemical Vapour Deposition (LPCVD); PbS and ZnS nanocrystals on Polydiacetylene (PDA) Langmuir-Blodget polymer films. The chemical, phase and atomic structure non-uniformity were determined using depth profiling techniques. The peculiarities of the {\textquoteleft}matrix-nanocrystal{\textquoteright} interface atomic and electronic structure, especially for nanocrystals were determined from analysis of XPS chemical shifts and vibrational spectra. The accommodation strains in the Si-nc:AL, O3 system were determined by EELFS. The comparison of electron spectroscopy methods and other techniques for nanocrystals investigations (PL, HR-TEM, ellipsometry) is made.",

keywords = "atomic structure, auger electron spectroscopy, depth profiling, electron energy losses fine structure spectroscopy, electronic structure, high resolution electron energy losses spectroscopy, semiconductor nanocrystals, surface, x-ray photoelectron spectroscopy",

author = "Kovalev, {Anatoly I.} and Wainstein, {D. L.} and Tetelbaum, {D. I.} and Mikhailov, {A. N.} and Y. Golan and Y. Lifshitz and A. Berman and P. Basa and Horvath, {Zs J.}",

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AU - Kovalev, Anatoly I.

AU - Wainstein, D. L.

AU - Tetelbaum, D. I.

AU - Mikhailov, A. N.

AU - Golan, Y.

AU - Lifshitz, Y.

AU - Berman, A.

AU - Basa, P.

AU - Horvath, Zs J.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - The electron spectroscopy techniques (X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES), High Resolution Electron Energy Losses Spectroscopy (HREELS), EELFS) were used for characterisation of semiconductor nanocrystals (Si, PbS, CdS) formed by various technologies: Si ion implantation in Al2O3 matrix and annealing; Si-rich multilayered SiNX Low Pressure Chemical Vapour Deposition (LPCVD); PbS and ZnS nanocrystals on Polydiacetylene (PDA) Langmuir-Blodget polymer films. The chemical, phase and atomic structure non-uniformity were determined using depth profiling techniques. The peculiarities of the ‘matrix-nanocrystal’ interface atomic and electronic structure, especially for nanocrystals were determined from analysis of XPS chemical shifts and vibrational spectra. The accommodation strains in the Si-nc:AL, O3 system were determined by EELFS. The comparison of electron spectroscopy methods and other techniques for nanocrystals investigations (PL, HR-TEM, ellipsometry) is made.

AB - The electron spectroscopy techniques (X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES), High Resolution Electron Energy Losses Spectroscopy (HREELS), EELFS) were used for characterisation of semiconductor nanocrystals (Si, PbS, CdS) formed by various technologies: Si ion implantation in Al2O3 matrix and annealing; Si-rich multilayered SiNX Low Pressure Chemical Vapour Deposition (LPCVD); PbS and ZnS nanocrystals on Polydiacetylene (PDA) Langmuir-Blodget polymer films. The chemical, phase and atomic structure non-uniformity were determined using depth profiling techniques. The peculiarities of the ‘matrix-nanocrystal’ interface atomic and electronic structure, especially for nanocrystals were determined from analysis of XPS chemical shifts and vibrational spectra. The accommodation strains in the Si-nc:AL, O3 system were determined by EELFS. The comparison of electron spectroscopy methods and other techniques for nanocrystals investigations (PL, HR-TEM, ellipsometry) is made.

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KW - electronic structure

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Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies

Abstract

Keywords

ASJC Scopus subject areas

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