Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies

Anatoly I. Kovalev, D. L. Wainstein, D. I. Tetelbaum, A. N. Mikhailov, Y. Golan, Y. Lifshitz, A. Berman, P. Basa, Zs J. Horvath

Research output: Contribution to journalArticlepeer-review


The electron spectroscopy techniques (X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES), High Resolution Electron Energy Losses Spectroscopy (HREELS), EELFS) were used for characterisation of semiconductor nanocrystals (Si, PbS, CdS) formed by various technologies: Si ion implantation in Al2O3 matrix and annealing; Si-rich multilayered SiNX Low Pressure Chemical Vapour Deposition (LPCVD); PbS and ZnS nanocrystals on Polydiacetylene (PDA) Langmuir-Blodget polymer films. The chemical, phase and atomic structure non-uniformity were determined using depth profiling techniques. The peculiarities of the ‘matrix-nanocrystal’ interface atomic and electronic structure, especially for nanocrystals were determined from analysis of XPS chemical shifts and vibrational spectra. The accommodation strains in the Si-nc:AL, O3 system were determined by EELFS. The comparison of electron spectroscopy methods and other techniques for nanocrystals investigations (PL, HR-TEM, ellipsometry) is made.

Original languageEnglish
Pages (from-to)14-31
Number of pages18
JournalInternational Journal of Nanoparticles
Issue number1
StatePublished - 1 Jan 2008


  • atomic structure
  • auger electron spectroscopy
  • depth profiling
  • electron energy losses fine structure spectroscopy
  • electronic structure
  • high resolution electron energy losses spectroscopy
  • semiconductor nanocrystals
  • surface
  • x-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Materials Science (all)
  • Condensed Matter Physics
  • Mechanical Engineering


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