Electronic and Optical Properties of 2D Ferromagnetic CrSiTe₃

Due to its distinctive qualities and potential uses in electronic and optoelectronic devices, the electronic and optical properties of CrSiTe3, a promising two-dimensional (2D) material, have attracted considerable attention. CrSiTe₃ belongs to the family of transition metal trichalcogenides (TMTCs) and possesses a layered crystal structure, comprising covalently bonded layers of chromium, silicon, and tellurium atoms. The material's absorption and reflectance spectra demonstrate strong polarization dependence and thickness-dependent optical transitions. This unique behavior has ramifications for the development of new optoelectronic devices such as solar cells, Photodetectors and modulators, that can exploit the tunable optical properties of CrSiTe₃. The band structure, partial density of states (PDOS), real and imaginary part of dielectric function, absorption coefficient, of CrSiTe₃ were calculated by using First principle based on density functional theory. CrSiTe₃ is an intriguing topic for research in the area of 2-dimensional materials due to its electrical and optical characteristics. Its tunable band gaps, strong spin-orbit coupling, and unique optical behaviour open up avenues for applications in next-generation optoelectronic devices.