TY - JOUR
T1 - Electronic properties of C60 thin films
AU - Mishori, B.
AU - Katz, E. A.
AU - Faiman, D.
AU - Belu-Manan, A.
AU - Shapira, Yoram
PY - 1998/1/1
Y1 - 1998/1/1
N2 - The electronic structure of polycrystallme C60 thin films has been investigated using surface photovoltage spectroscopy (SPS) and conductivity measurements. The films show n-type semiconductivity with an activation energy of ≈0.8 eV as found from the temperature dependence of the conductivity at high temperatures. The electronic structure emerging from our SPS results comprises a 1.6 eV photoconduction gap, a mobility gap of about 2.25 eV and two gap states, a donor and an acceptor, at 0.35 eV and (1.0-1.1) eV, respectively, below the photo-conduction edge. The results indicate the possibility of the existence of band tails, extending into the optical gap of these films, as well as other deep gap states.
AB - The electronic structure of polycrystallme C60 thin films has been investigated using surface photovoltage spectroscopy (SPS) and conductivity measurements. The films show n-type semiconductivity with an activation energy of ≈0.8 eV as found from the temperature dependence of the conductivity at high temperatures. The electronic structure emerging from our SPS results comprises a 1.6 eV photoconduction gap, a mobility gap of about 2.25 eV and two gap states, a donor and an acceptor, at 0.35 eV and (1.0-1.1) eV, respectively, below the photo-conduction edge. The results indicate the possibility of the existence of band tails, extending into the optical gap of these films, as well as other deep gap states.
UR - http://www.scopus.com/inward/record.url?scp=0031683833&partnerID=8YFLogxK
U2 - 10.1080/10641229809350188
DO - 10.1080/10641229809350188
M3 - Article
AN - SCOPUS:0031683833
SN - 1064-122X
VL - 6
SP - 113
EP - 124
JO - Fullerene Science and Technology
JF - Fullerene Science and Technology
IS - 1
ER -
