Electronic properties of co-doped nonstoichiometric germanium telluride

Dana Ben-Ayoun, Yaniv Gelbstein

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


GeTe-based alloys have been considered as p-type thermoelectric materials for decades. Yet the fact that they possess intrinsically high concentration of cation germanium vacancies have triggered the thermoelectric community in finding alternatives and strategies to optimize their efficiency. While most of the published studies mainly discuss the stoichiometric alloy, here we demonstrate the introduction of excess germanium/tellurium to the system. The nonstoichiometric alloy is doped with bismuth, acting as a donor simultaneously with an increased number of vacancies, enabling higher solubility of other impurities (iodine/indium). This strategy and the mechanisms involved, has been investigated and correlated to the microstructural characteristics. ZT of ~1.6 was obtained but more importantly, it opens the opportunity for a potential route for further thermoelectric enhancement.

Original languageEnglish
Article number107118
StatePublished - 1 Apr 2021


  • BiTe
  • GEM
  • GeTe
  • Thermoelectric

ASJC Scopus subject areas

  • General Chemistry
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Electronic properties of co-doped nonstoichiometric germanium telluride'. Together they form a unique fingerprint.

Cite this