Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface

Muhammad Y. Bashouti, Peyman Yousefi, Jürgen Ristein, Silke H. Christiansen

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Attenuated total reflectance (ATR) and X-ray photoelectron spectroscopy in suite with Kelvin probe were conjugated to explore the electronic properties of Si-Hx vibrational modes by developing Si waveguide with large dynamic detection range compared with conventional IR. The Si 2p emission and work-function related to the formation and elimination of Si-Hx bonds at Si surfaces are monitored based on the detection of vibrational mode frequencies. A transition between various Si-Hx bonds and thus related vibrational modes is monitored for which effective momentum transfer could be demonstrated. The combination of the aforementioned methods provides for results that permit a model for the kinetics of hydrogen termination of Si surfaces with time and advanced surface characterizing of hybrid-terminated semiconducting solids.

Original languageEnglish
Pages (from-to)3988-3993
Number of pages6
JournalJournal of Physical Chemistry Letters
Volume6
Issue number19
DOIs
StatePublished - 22 Sep 2015
Externally publishedYes

Keywords

  • ATR
  • Si waveguide
  • Si-H vibrational modes
  • XPS
  • work-function

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