Electronic topological transition in AuX2 (X = In, Ga and Al) compounds at high pressures

Alka B. Garg; B. K. Godwal; S. Meenakshi; P. Modak; R. S. Rao; S. K. Sikka; V. Vijayakumar; A. Lausi; E. Bussetto

doi:10.1088/0953-8984/14/44/341

Electronic topological transition in AuX₂ (X = In, Ga and Al) compounds at high pressures

Alka B. Garg, B. K. Godwal, S. Meenakshi, P. Modak, R. S. Rao, S. K. Sikka, V. Vijayakumar, A. Lausi, E. Bussetto

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We present accurate x-ray diffraction data at high pressures for AuIn₂, AuGa₂ and AuAl₂, obtained using a diamond anvil cell with the ELETTRA synchrotron source. The resulting P-V data obtained from the d-values were used to get the universal equation of state (UEOS), which is compared with theoretical estimates. Deviation from linearity is evident in the UEOS curves of AuIn₂ and AuGa₂, thus verifying that some of the observed anomalies in these systems below 5 GPa are due to electronic topological transitions.

Original language	English
Pages (from-to)	10605-10608
Number of pages	4
Journal	Journal of Physics Condensed Matter
Volume	14
Issue number	44 SPEC ISS.
DOIs	https://doi.org/10.1088/0953-8984/14/44/341
State	Published - 11 Nov 2002
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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title = "Electronic topological transition in AuX2 (X = In, Ga and Al) compounds at high pressures",

abstract = "We present accurate x-ray diffraction data at high pressures for AuIn2, AuGa2 and AuAl2, obtained using a diamond anvil cell with the ELETTRA synchrotron source. The resulting P-V data obtained from the d-values were used to get the universal equation of state (UEOS), which is compared with theoretical estimates. Deviation from linearity is evident in the UEOS curves of AuIn2 and AuGa2, thus verifying that some of the observed anomalies in these systems below 5 GPa are due to electronic topological transitions.",

author = "Garg, {Alka B.} and Godwal, {B. K.} and S. Meenakshi and P. Modak and Rao, {R. S.} and Sikka, {S. K.} and V. Vijayakumar and A. Lausi and E. Bussetto",

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T1 - Electronic topological transition in AuX2 (X = In, Ga and Al) compounds at high pressures

AU - Garg, Alka B.

AU - Godwal, B. K.

AU - Meenakshi, S.

AU - Modak, P.

AU - Rao, R. S.

AU - Sikka, S. K.

AU - Vijayakumar, V.

AU - Lausi, A.

AU - Bussetto, E.

PY - 2002/11/11

Y1 - 2002/11/11

N2 - We present accurate x-ray diffraction data at high pressures for AuIn2, AuGa2 and AuAl2, obtained using a diamond anvil cell with the ELETTRA synchrotron source. The resulting P-V data obtained from the d-values were used to get the universal equation of state (UEOS), which is compared with theoretical estimates. Deviation from linearity is evident in the UEOS curves of AuIn2 and AuGa2, thus verifying that some of the observed anomalies in these systems below 5 GPa are due to electronic topological transitions.

AB - We present accurate x-ray diffraction data at high pressures for AuIn2, AuGa2 and AuAl2, obtained using a diamond anvil cell with the ELETTRA synchrotron source. The resulting P-V data obtained from the d-values were used to get the universal equation of state (UEOS), which is compared with theoretical estimates. Deviation from linearity is evident in the UEOS curves of AuIn2 and AuGa2, thus verifying that some of the observed anomalies in these systems below 5 GPa are due to electronic topological transitions.

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U2 - 10.1088/0953-8984/14/44/341

DO - 10.1088/0953-8984/14/44/341

M3 - Article

AN - SCOPUS:0037064852

SN - 0953-8984

VL - 14

SP - 10605

EP - 10608

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

IS - 44 SPEC ISS.

ER -

Electronic topological transition in AuX₂ (X = In, Ga and Al) compounds at high pressures

Abstract

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