Electronic tuning of the transport properties of off-stoichiometric PbxSn1-xTe thermoelectric alloys by Bi2Te3 doping

Gilad M. Guttmann, David Dadon, Yaniv Gelbstein

Research output: Contribution to journalArticlepeer-review

70 Scopus citations

Abstract

The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type PbxSn1-xTe alloys by tuning of Bi2Te3 doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb0.5Sn0.5Te alloy, were obtained at temperatures lower than 210-340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected.

Original languageEnglish
Article number065102
JournalJournal of Applied Physics
Volume118
Issue number6
DOIs
StatePublished - 14 Aug 2015

ASJC Scopus subject areas

  • Physics and Astronomy (all)

Fingerprint

Dive into the research topics of 'Electronic tuning of the transport properties of off-stoichiometric PbxSn1-xTe thermoelectric alloys by Bi2Te3 doping'. Together they form a unique fingerprint.

Cite this