Electronically active layers and interfaces in polycrystalline devices: Cross-section mapping of CdS/CdTe solar cells

Iris Visoly-Fisher; Sidney R. Cohen; David Cahen; Christos S. Ferekides

doi:10.1063/1.1632532

Electronically active layers and interfaces in polycrystalline devices: Cross-section mapping of CdS/CdTe solar cells

Iris Visoly-Fisher
, Sidney R. Cohen
, David Cahen
, Christos S. Ferekides

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Type conversion in CdS in CdTe/CdS solar cells was disproved. CdS and high-resistance SnO₂ layer in USF cells were found to be electronically similar, rationalizing the need for a HR layer in cells with very thin CdS for supporting the junction photovoltage, without reducing the cell's blue response. Most importantly, combined XS SCM and SKPM of CdTe/CdS cells show that the photovoltaic and metallurgical functions coincide.

Original language	English
Pages (from-to)	4924-4926
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	24
DOIs	https://doi.org/10.1063/1.1632532
State	Published - 15 Dec 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1063/1.1632532

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title = "Electronically active layers and interfaces in polycrystalline devices: Cross-section mapping of CdS/CdTe solar cells",

abstract = "Type conversion in CdS in CdTe/CdS solar cells was disproved. CdS and high-resistance SnO2 layer in USF cells were found to be electronically similar, rationalizing the need for a HR layer in cells with very thin CdS for supporting the junction photovoltage, without reducing the cell's blue response. Most importantly, combined XS SCM and SKPM of CdTe/CdS cells show that the photovoltaic and metallurgical functions coincide.",

author = "Iris Visoly-Fisher and Cohen, \{Sidney R.\} and David Cahen and Ferekides, \{Christos S.\}",

year = "2003",

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volume = "83",

pages = "4924--4926",

journal = "Applied Physics Letters",

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T1 - Electronically active layers and interfaces in polycrystalline devices

T2 - Cross-section mapping of CdS/CdTe solar cells

AU - Visoly-Fisher, Iris

AU - Cohen, Sidney R.

AU - Cahen, David

AU - Ferekides, Christos S.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - Type conversion in CdS in CdTe/CdS solar cells was disproved. CdS and high-resistance SnO2 layer in USF cells were found to be electronically similar, rationalizing the need for a HR layer in cells with very thin CdS for supporting the junction photovoltage, without reducing the cell's blue response. Most importantly, combined XS SCM and SKPM of CdTe/CdS cells show that the photovoltaic and metallurgical functions coincide.

AB - Type conversion in CdS in CdTe/CdS solar cells was disproved. CdS and high-resistance SnO2 layer in USF cells were found to be electronically similar, rationalizing the need for a HR layer in cells with very thin CdS for supporting the junction photovoltage, without reducing the cell's blue response. Most importantly, combined XS SCM and SKPM of CdTe/CdS cells show that the photovoltaic and metallurgical functions coincide.

UR - https://www.scopus.com/pages/publications/0347133647

U2 - 10.1063/1.1632532

DO - 10.1063/1.1632532

M3 - Article

AN - SCOPUS:0347133647

SN - 0003-6951

VL - 83

SP - 4924

EP - 4926

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Electronically active layers and interfaces in polycrystalline devices: Cross-section mapping of CdS/CdTe solar cells

Abstract

ASJC Scopus subject areas

UN SDGs

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