Electroreflectance and photoreflectance characterization of the space charge region in semiconductors: INO/inp as a model system

R. N. Bhattacharya, H. Shen, P. Parayanthal, Fred H. Pollak, T. Coutts, H. Aharoni

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We have investigated the electroreflectance (ER) and photoreflectance (PR) spectra from the space charge region (SCR) of the model Schottky barrier system indium-tin-oxide on p-InP (ITO/InP). Both ER and PR were studied as a function of reverse dc bias, Vbias. The observed Franz-Keldysh oscillations (FKO) provide a direct measure of the surface dc electric field, εsdc. In ER the ac modulating voltage (for small modulation) effects only the envelope of the FKO but not the period. A generalized Franz-Keldysh theory, taking into consideration large built-in dc fields, is presented which accounts for the above experimental results. From a plot of (εsdc)2 as a function of Vbias we have obtained the built-in potential and net carrier concentration of the device. Our work demonstrates that electromodulation in Schottky barriers can be used as an optical Mott-Schottky method.

Original languageEnglish
Pages (from-to)81-87
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume794
DOIs
StatePublished - 22 Apr 1987
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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