Electroreflectance and photoreflectance characterization of the space charge region in semiconductors: INO/inp as a model system

R. N. Bhattacharya; H. Shen; P. Parayanthal; Fred H. Pollak; T. Coutts; H. Aharoni

doi:10.1117/12.940896

Electroreflectance and photoreflectance characterization of the space charge region in semiconductors: INO/inp as a model system

R. N. Bhattacharya, H. Shen, P. Parayanthal, Fred H. Pollak, T. Coutts, H. Aharoni

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We have investigated the electroreflectance (ER) and photoreflectance (PR) spectra from the space charge region (SCR) of the model Schottky barrier system indium-tin-oxide on p-InP (ITO/InP). Both ER and PR were studied as a function of reverse dc bias, V_bias. The observed Franz-Keldysh oscillations (FKO) provide a direct measure of the surface dc electric field, ε^s_dc. In ER the ac modulating voltage (for small modulation) effects only the envelope of the FKO but not the period. A generalized Franz-Keldysh theory, taking into consideration large built-in dc fields, is presented which accounts for the above experimental results. From a plot of (ε^s_dc)² as a function of Vbias we have obtained the built-in potential and net carrier concentration of the device. Our work demonstrates that electromodulation in Schottky barriers can be used as an optical Mott-Schottky method.

Original language	English
Pages (from-to)	81-87
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	794
DOIs	https://doi.org/10.1117/12.940896
State	Published - 22 Apr 1987
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Electroreflectance and photoreflectance characterization of the space charge region in semiconductors: INO/inp as a model system",

abstract = "We have investigated the electroreflectance (ER) and photoreflectance (PR) spectra from the space charge region (SCR) of the model Schottky barrier system indium-tin-oxide on p-InP (ITO/InP). Both ER and PR were studied as a function of reverse dc bias, Vbias. The observed Franz-Keldysh oscillations (FKO) provide a direct measure of the surface dc electric field, εsdc. In ER the ac modulating voltage (for small modulation) effects only the envelope of the FKO but not the period. A generalized Franz-Keldysh theory, taking into consideration large built-in dc fields, is presented which accounts for the above experimental results. From a plot of (εsdc)2 as a function of Vbias we have obtained the built-in potential and net carrier concentration of the device. Our work demonstrates that electromodulation in Schottky barriers can be used as an optical Mott-Schottky method.",

author = "Bhattacharya, {R. N.} and H. Shen and P. Parayanthal and Pollak, {Fred H.} and T. Coutts and H. Aharoni",

note = "Funding Information: The Brooklyn College group wishes to acknowledge the partial support of the IBM Shared University Research Program (SUR) and the New York State Foundation for Science and Technology as a part of its Center for Advanced Technology Program.",

year = "1987",

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doi = "10.1117/12.940896",

language = "English",

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T1 - Electroreflectance and photoreflectance characterization of the space charge region in semiconductors

T2 - INO/inp as a model system

AU - Bhattacharya, R. N.

AU - Shen, H.

AU - Parayanthal, P.

AU - Pollak, Fred H.

AU - Coutts, T.

AU - Aharoni, H.

N1 - Funding Information: The Brooklyn College group wishes to acknowledge the partial support of the IBM Shared University Research Program (SUR) and the New York State Foundation for Science and Technology as a part of its Center for Advanced Technology Program.

PY - 1987/4/22

Y1 - 1987/4/22

N2 - We have investigated the electroreflectance (ER) and photoreflectance (PR) spectra from the space charge region (SCR) of the model Schottky barrier system indium-tin-oxide on p-InP (ITO/InP). Both ER and PR were studied as a function of reverse dc bias, Vbias. The observed Franz-Keldysh oscillations (FKO) provide a direct measure of the surface dc electric field, εsdc. In ER the ac modulating voltage (for small modulation) effects only the envelope of the FKO but not the period. A generalized Franz-Keldysh theory, taking into consideration large built-in dc fields, is presented which accounts for the above experimental results. From a plot of (εsdc)2 as a function of Vbias we have obtained the built-in potential and net carrier concentration of the device. Our work demonstrates that electromodulation in Schottky barriers can be used as an optical Mott-Schottky method.

AB - We have investigated the electroreflectance (ER) and photoreflectance (PR) spectra from the space charge region (SCR) of the model Schottky barrier system indium-tin-oxide on p-InP (ITO/InP). Both ER and PR were studied as a function of reverse dc bias, Vbias. The observed Franz-Keldysh oscillations (FKO) provide a direct measure of the surface dc electric field, εsdc. In ER the ac modulating voltage (for small modulation) effects only the envelope of the FKO but not the period. A generalized Franz-Keldysh theory, taking into consideration large built-in dc fields, is presented which accounts for the above experimental results. From a plot of (εsdc)2 as a function of Vbias we have obtained the built-in potential and net carrier concentration of the device. Our work demonstrates that electromodulation in Schottky barriers can be used as an optical Mott-Schottky method.

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EP - 87

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Electroreflectance and photoreflectance characterization of the space charge region in semiconductors: INO/inp as a model system

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