Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system

R. N. Bhattacharya; H. Shen; P. Parayanthal; Fred H. Pollak; T. Coutts; H. Aharoni

doi:10.1103/PhysRevB.37.4044

Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system

R. N. Bhattacharya, H. Shen, P. Parayanthal, Fred H. Pollak, T. Coutts, H. Aharoni

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Abstract

We have investigated the electroreflectance (ER) and photoreflectance (PR) spectra from the space-charge region (SCR) of the model Schottky- barrier system (In2O3)0.91(SnO2)0.09 on p-type InP [(In-Sn-O)/InP]. Both ER and PR were studied as a function of reverse dc bias, Vbias. The observed Franz-Keldysh oscillations provide a direct measure of the surface dc electric field, scrEdcs. The ac modulating voltage (for small modulation) affects only the envelope of the FKO but not the period. A generalized Franz-Keldysh theory, taking into consideration the presence of dc fields, accounts for the above experimental results. From a plot of (scrEdcs)2 as a function of Vbias we have obtained the built-in potential and net carrier concentration of the structure. Our work demonstrates that electromodulation in Schottky barriers can be used as an optical Mott-Schottky method.

Original language	English
Pages (from-to)	4044-4050
Number of pages	7
Journal	Physical Review B
Volume	37
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.37.4044
State	Published - 1 Jan 1988
Externally published	Yes

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Condensed Matter Physics

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title = "Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system",

abstract = "We have investigated the electroreflectance (ER) and photoreflectance (PR) spectra from the space-charge region (SCR) of the model Schottky- barrier system (In2O3)0.91(SnO2)0.09 on p-type InP [(In-Sn-O)/InP]. Both ER and PR were studied as a function of reverse dc bias, Vbias. The observed Franz-Keldysh oscillations provide a direct measure of the surface dc electric field, scrEdcs. The ac modulating voltage (for small modulation) affects only the envelope of the FKO but not the period. A generalized Franz-Keldysh theory, taking into consideration the presence of dc fields, accounts for the above experimental results. From a plot of (scrEdcs)2 as a function of Vbias we have obtained the built-in potential and net carrier concentration of the structure. Our work demonstrates that electromodulation in Schottky barriers can be used as an optical Mott-Schottky method.",

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T2 - (In-Sn-O)/InP as a model system

AU - Bhattacharya, R. N.

AU - Shen, H.

AU - Parayanthal, P.

AU - Pollak, Fred H.

AU - Coutts, T.

AU - Aharoni, H.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - We have investigated the electroreflectance (ER) and photoreflectance (PR) spectra from the space-charge region (SCR) of the model Schottky- barrier system (In2O3)0.91(SnO2)0.09 on p-type InP [(In-Sn-O)/InP]. Both ER and PR were studied as a function of reverse dc bias, Vbias. The observed Franz-Keldysh oscillations provide a direct measure of the surface dc electric field, scrEdcs. The ac modulating voltage (for small modulation) affects only the envelope of the FKO but not the period. A generalized Franz-Keldysh theory, taking into consideration the presence of dc fields, accounts for the above experimental results. From a plot of (scrEdcs)2 as a function of Vbias we have obtained the built-in potential and net carrier concentration of the structure. Our work demonstrates that electromodulation in Schottky barriers can be used as an optical Mott-Schottky method.

AB - We have investigated the electroreflectance (ER) and photoreflectance (PR) spectra from the space-charge region (SCR) of the model Schottky- barrier system (In2O3)0.91(SnO2)0.09 on p-type InP [(In-Sn-O)/InP]. Both ER and PR were studied as a function of reverse dc bias, Vbias. The observed Franz-Keldysh oscillations provide a direct measure of the surface dc electric field, scrEdcs. The ac modulating voltage (for small modulation) affects only the envelope of the FKO but not the period. A generalized Franz-Keldysh theory, taking into consideration the presence of dc fields, accounts for the above experimental results. From a plot of (scrEdcs)2 as a function of Vbias we have obtained the built-in potential and net carrier concentration of the structure. Our work demonstrates that electromodulation in Schottky barriers can be used as an optical Mott-Schottky method.

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Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system

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