Empirical dark current modeling for complementary metal oxide semiconductor active pixel sensor

Igor Shcherback, Alexander Belenky, Orly Yadid-Pecht

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We present an empirical dark current model for CMOS active pixel sensors (APSs). The model is based on experimental data taken of a 256 × 256 APS chip fabricated via HP in a standard 0.5-μm CMOS technology process. This quantitative model determines the pixel dark current dependence on two contributing factors: the "ideal" dark current determined by the photodiode junction, introduced here as a stable shot noise influence of the device active area, and a leakage current due to the device active area shape, i.e., the number of corners present in the photodiode and their angles. This part is introduced as a process-induced structure stress effect.

Original languageEnglish
Pages (from-to)1216-1219
Number of pages4
JournalOptical Engineering
Volume41
Issue number6
DOIs
StatePublished - 1 Jun 2002

Keywords

  • Active pixel sensors
  • Complementary metal oxide semiconductor image sensors
  • Dark current
  • Modeling
  • Photodiodes

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