TY - GEN
T1 - Energy-delay tradeoffs of low-voltage dual mode logic in 28nm FD-SOI
AU - Taco, Ramiro
AU - Levi, Itamar
AU - Lanuzza, Marco
AU - Fish, Alexander
N1 - Funding Information:
The authors acknowledge the Israel Science Foundation (ISF) for financial support (grant 1678/13).
Publisher Copyright:
© 2017 IEEE.
PY - 2018/3/7
Y1 - 2018/3/7
N2 - In this paper, the Dual Mode Logic (DML) technique is evaluated on a low-voltage 16-bit Carry Skip Adder in 28 nm UTBB FD-SOI technology. By combining the operating characteristics of the DML and the unique features of the technology, energy/speed efficient low-voltage adder designs can be defined. More precisely, it is demonstrated that, the capability of the DML design to switch on-the-fly between static and dynamic modes of operation leads to an improvement of more than 20% in terms of energy-delay product (EDP) in comparison to the conventional CMOS design. Moreover, the high efficiency of back plane biasing in the adopted technology allows very fine tuning of energy-delay performances of a DML design, thus emphasizing its intrinsic versatility.
AB - In this paper, the Dual Mode Logic (DML) technique is evaluated on a low-voltage 16-bit Carry Skip Adder in 28 nm UTBB FD-SOI technology. By combining the operating characteristics of the DML and the unique features of the technology, energy/speed efficient low-voltage adder designs can be defined. More precisely, it is demonstrated that, the capability of the DML design to switch on-the-fly between static and dynamic modes of operation leads to an improvement of more than 20% in terms of energy-delay product (EDP) in comparison to the conventional CMOS design. Moreover, the high efficiency of back plane biasing in the adopted technology allows very fine tuning of energy-delay performances of a DML design, thus emphasizing its intrinsic versatility.
KW - Dual mode logic (DML)
KW - carry skip adder
KW - low-voltage
UR - http://www.scopus.com/inward/record.url?scp=85047752674&partnerID=8YFLogxK
U2 - 10.1109/S3S.2017.8309250
DO - 10.1109/S3S.2017.8309250
M3 - Conference contribution
AN - SCOPUS:85047752674
T3 - 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
SP - 1
EP - 3
BT - 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
PB - Institute of Electrical and Electronics Engineers
T2 - 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
Y2 - 16 October 2017 through 18 October 2017
ER -