TY - JOUR
T1 - Enhanced magnetoelectric coupling in trilayer PNNZT/CTFO/PNNZT composite thin films prepared by pulsed laser deposition
AU - Miriyala, Kumarswamy
AU - Pandey, Adityanarayan H.
AU - Sowmya, N. Shara
AU - Kulkarni, Ajit R.
AU - Narayanan, Venkataramani
N1 - Funding Information:
The authors are grateful to the MEMS department, SAIF, and IRCC IIT Bombay for providing XRD, broadband dielectric spectrometer, PE hysteresis loop tracer, and PPMS-VSM, SPM, ME measurement facilities. KM, NV & ARK acknowledge the Department of Science and Technology, India (SERB: EMR/2017/001916) for the financial support to carry out this work. AP acknowledges the Indian Institute of Technology Bombay for the post-doctoral research fellowship.
Funding Information:
The authors are grateful to the MEMS department, SAIF, and IRCC IIT Bombay for providing XRD, broadband dielectric spectrometer, PE hysteresis loop tracer, and PPMS-VSM, SPM, ME measurement facilities. KM, NV & ARK acknowledge the Department of Science and Technology , India (SERB: EMR/2017/001916 ) for the financial support to carry out this work. AP acknowledges the Indian Institute of Technology Bombay for the post-doctoral research fellowship.
Publisher Copyright:
© 2022 Elsevier Ltd
PY - 2023/3/1
Y1 - 2023/3/1
N2 - Magnetoelectric 2–2 multilayer composite structures have gained attention due to strong ME coupling and as potential next generation multifunctional devices. In this study, we report our studies on the polycrystalline trilayer PNNZT/CTFO/PNNZT (PNNZT: 0.5Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.15PbZrO3; CTFO:Co1.2Ti0.2Fe1.6O4) composite thin films grown on (111)Pt/Ti/SiO2/Si(100) substrate by a pulsed laser deposition (PLD) technique. The structural and phase purity data were acquired by using grazing incidence x-ray diffraction (GI-XRD) studies. Individual layer ferroelectric PNNZT (remanent polarization Pr∼ 31µC/cm2, piezoelectric coefficient d33*∼182 pm/V), and ferromagnetic CTFO (Magnetization Ms∼ 125 emu/cc) thin films displayed a significant functional property, which confirms the high quality of the thin film growth. Further, the trilayer composite thin films also showed significant ferroelectric (Pr∼ 21 µC/cm2) and magnetic (Ms∼ 116 emu/cc) properties. In addition, these trilayer thin films exhibit a strong ME coupling by attaining a desirable magnetoelectric voltage coefficient (MEVC: αME) of 1.12V cm−1 Oe−1 at 1 kHz, with device application capability. This is one of the highest reported MEVC values in the case of PNNZT/CTFO/PNNZT trilayer composite thin films.
AB - Magnetoelectric 2–2 multilayer composite structures have gained attention due to strong ME coupling and as potential next generation multifunctional devices. In this study, we report our studies on the polycrystalline trilayer PNNZT/CTFO/PNNZT (PNNZT: 0.5Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.15PbZrO3; CTFO:Co1.2Ti0.2Fe1.6O4) composite thin films grown on (111)Pt/Ti/SiO2/Si(100) substrate by a pulsed laser deposition (PLD) technique. The structural and phase purity data were acquired by using grazing incidence x-ray diffraction (GI-XRD) studies. Individual layer ferroelectric PNNZT (remanent polarization Pr∼ 31µC/cm2, piezoelectric coefficient d33*∼182 pm/V), and ferromagnetic CTFO (Magnetization Ms∼ 125 emu/cc) thin films displayed a significant functional property, which confirms the high quality of the thin film growth. Further, the trilayer composite thin films also showed significant ferroelectric (Pr∼ 21 µC/cm2) and magnetic (Ms∼ 116 emu/cc) properties. In addition, these trilayer thin films exhibit a strong ME coupling by attaining a desirable magnetoelectric voltage coefficient (MEVC: αME) of 1.12V cm−1 Oe−1 at 1 kHz, with device application capability. This is one of the highest reported MEVC values in the case of PNNZT/CTFO/PNNZT trilayer composite thin films.
KW - Ferroelectrics
KW - Magnetoelectric coupling
KW - PFM
KW - Piezoelectrics
KW - Pulsed Laser Deposition
UR - http://www.scopus.com/inward/record.url?scp=85144371381&partnerID=8YFLogxK
U2 - 10.1016/j.mtcomm.2022.105120
DO - 10.1016/j.mtcomm.2022.105120
M3 - Article
AN - SCOPUS:85144371381
SN - 2352-4928
VL - 34
JO - Materials Today Communications
JF - Materials Today Communications
M1 - 105120
ER -