Enhanced spin-orbit torque switching in perpendicular multilayers via interfacial oxygen tunability

J. Y. Zhang; P. W. Dou; W. L. Peng; J. Qi; J. Q. Liu; R. Y. Liu; X. Q. Zheng; Y. F. Wu; H. C. Lyu; Y. C. Zhao; Z. Z. Zhu; C. Y. You; A. Kohn; S. G. Wang

doi:10.1063/5.0024950

Enhanced spin-orbit torque switching in perpendicular multilayers via interfacial oxygen tunability

J. Y. Zhang, P. W. Dou, W. L. Peng, J. Qi, J. Q. Liu, R. Y. Liu, X. Q. Zheng, Y. F. Wu, H. C. Lyu, Y. C. Zhao, Z. Z. Zhu, C. Y. You, A. Kohn, S. G. Wang

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Spin-orbit torque (SOT) offers a promising pathway to electrically manipulate magnetization in perpendicular multilayers, but the ultrahigh current density required for SOT switching limits its applications. Here, we report that field-free SOT switching is achieved in perpendicular Ta/CoFeB/MgO multilayers by inserting ultrathin Mg or Hf layers. A critical current density of 1.18 × 107 A/cm2 is obtained in Ta/CoFeB/Mg(0.1 nm)/MgO multilayers for field-free SOT switching, which is 42% lower than that in the Ta/CoFeB/MgO sample. The results demonstrate that the enhanced SOT switching efficiency is determined by a modified Rashba interface induced by interfacial orbital hybridization due to the presence of an ultrathin inserted layer. Furthermore, SOT exhibits a significant dependence on the interfacial structure, especially the interfacial oxygen content. Our findings provide an effective insight into the interfacial manipulation of SOT-based spintronic devices.

Original language	English
Article number	24950
Journal	Applied Physics Letters
Volume	117
Issue number	23
DOIs	https://doi.org/10.1063/5.0024950
State	Published - 7 Dec 2020
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0024950

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@article{f15bbd402c974d7b941b7dd60b1ba95d,

title = "Enhanced spin-orbit torque switching in perpendicular multilayers via interfacial oxygen tunability",

abstract = "Spin-orbit torque (SOT) offers a promising pathway to electrically manipulate magnetization in perpendicular multilayers, but the ultrahigh current density required for SOT switching limits its applications. Here, we report that field-free SOT switching is achieved in perpendicular Ta/CoFeB/MgO multilayers by inserting ultrathin Mg or Hf layers. A critical current density of 1.18 × 107 A/cm2 is obtained in Ta/CoFeB/Mg(0.1 nm)/MgO multilayers for field-free SOT switching, which is 42% lower than that in the Ta/CoFeB/MgO sample. The results demonstrate that the enhanced SOT switching efficiency is determined by a modified Rashba interface induced by interfacial orbital hybridization due to the presence of an ultrathin inserted layer. Furthermore, SOT exhibits a significant dependence on the interfacial structure, especially the interfacial oxygen content. Our findings provide an effective insight into the interfacial manipulation of SOT-based spintronic devices.",

author = "Zhang, {J. Y.} and Dou, {P. W.} and Peng, {W. L.} and J. Qi and Liu, {J. Q.} and Liu, {R. Y.} and Zheng, {X. Q.} and Wu, {Y. F.} and Lyu, {H. C.} and Zhao, {Y. C.} and Zhu, {Z. Z.} and You, {C. Y.} and A. Kohn and Wang, {S. G.}",

note = "Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = dec,

day = "7",

doi = "10.1063/5.0024950",

language = "English",

volume = "117",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Enhanced spin-orbit torque switching in perpendicular multilayers via interfacial oxygen tunability

AU - Zhang, J. Y.

AU - Dou, P. W.

AU - Peng, W. L.

AU - Qi, J.

AU - Liu, J. Q.

AU - Liu, R. Y.

AU - Zheng, X. Q.

AU - Wu, Y. F.

AU - Lyu, H. C.

AU - Zhao, Y. C.

AU - Zhu, Z. Z.

AU - You, C. Y.

AU - Kohn, A.

AU - Wang, S. G.

PY - 2020/12/7

Y1 - 2020/12/7

N2 - Spin-orbit torque (SOT) offers a promising pathway to electrically manipulate magnetization in perpendicular multilayers, but the ultrahigh current density required for SOT switching limits its applications. Here, we report that field-free SOT switching is achieved in perpendicular Ta/CoFeB/MgO multilayers by inserting ultrathin Mg or Hf layers. A critical current density of 1.18 × 107 A/cm2 is obtained in Ta/CoFeB/Mg(0.1 nm)/MgO multilayers for field-free SOT switching, which is 42% lower than that in the Ta/CoFeB/MgO sample. The results demonstrate that the enhanced SOT switching efficiency is determined by a modified Rashba interface induced by interfacial orbital hybridization due to the presence of an ultrathin inserted layer. Furthermore, SOT exhibits a significant dependence on the interfacial structure, especially the interfacial oxygen content. Our findings provide an effective insight into the interfacial manipulation of SOT-based spintronic devices.

AB - Spin-orbit torque (SOT) offers a promising pathway to electrically manipulate magnetization in perpendicular multilayers, but the ultrahigh current density required for SOT switching limits its applications. Here, we report that field-free SOT switching is achieved in perpendicular Ta/CoFeB/MgO multilayers by inserting ultrathin Mg or Hf layers. A critical current density of 1.18 × 107 A/cm2 is obtained in Ta/CoFeB/Mg(0.1 nm)/MgO multilayers for field-free SOT switching, which is 42% lower than that in the Ta/CoFeB/MgO sample. The results demonstrate that the enhanced SOT switching efficiency is determined by a modified Rashba interface induced by interfacial orbital hybridization due to the presence of an ultrathin inserted layer. Furthermore, SOT exhibits a significant dependence on the interfacial structure, especially the interfacial oxygen content. Our findings provide an effective insight into the interfacial manipulation of SOT-based spintronic devices.

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U2 - 10.1063/5.0024950

DO - 10.1063/5.0024950

M3 - Article

AN - SCOPUS:85097895202

SN - 0003-6951

VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 24950

ER -

Enhanced spin-orbit torque switching in perpendicular multilayers via interfacial oxygen tunability

Abstract

ASJC Scopus subject areas

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