Abstract
We present a simple post-processing treatment, which dramatically improves the electrical properties of inverted geometry bulk-heterojunction organic solar cells, by enhancing functionality of the zinc-oxide hole blocking layer. The results show that inherent problems associated with the ZnO layer (e.g. shunting and JV inflection points) are of the same origin and can be efficiently treated and removed.
| Original language | English |
|---|---|
| Pages (from-to) | 491-493 |
| Number of pages | 3 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 98 |
| DOIs | |
| State | Published - 1 Mar 2012 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Bulk-heterojunction
- Hole blocking layer
- Inflection point
- Organic photovoltaics
- Shunting effect
- ZnO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
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