Epitaxial catalyst-free growth of InN nanorods on c-plane sapphire

I. Shalish, G. Seryogin, W. Yi, J. M. Bao, M. A. Zimmler, E. Likovich, D. C. Bell, F. Capasso, V. Narayanamurti

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H-InN single crystals growing in the [0001] orientation. The InN rods are uniform, showing very little variation in both diameter and length. Surprisingly, the rods show clear epitaxial relations with the c-plane sapphire substrate, despite about 29% of lattice mismatch. Comparing catalyst-free with Ni-catalyzed growth, the only difference observed is in the density of nucleation sites, suggesting that Ni does not work like the typical vapor-liquid-solid catalyst, but rather functions as a nucleation promoter by catalyzing the decomposition of ammonia. No conclusive photoluminescence was observed from single nanorods, while integrating over a large area showed weak wide emissions centered at 0.78 and at 1.9 eV.

Original languageEnglish
Pages (from-to)532-537
Number of pages6
JournalNanoscale Research Letters
Issue number6
StatePublished - 1 Jun 2009


  • Catalyst-free
  • Epitaxial growth
  • InN
  • Nanorods
  • Nanowires
  • Ni
  • Sapphire

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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