Epitaxial Electrodeposition of Semiconductor Quantum Dots: The Role of Lattice

Y GOLAN; L MARGULIS; G HODES; JL HUTCHISON; Israel Rubinstein

Epitaxial Electrodeposition of Semiconductor Quantum Dots: The Role of Lattice

Y GOLAN, L MARGULIS, G HODES, JL HUTCHISON, Israel Rubinstein

Department of Materials Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Since the crystal size of semiconductor quantum dots (QDs) affects the optoelectronic properties of QDs, a method of controlling the size is important. It is demonstrated that CdSe QDs electrodeposited epitaxially on {111} Au can be tuned from <5 to ∼ 20 nm by introducing small amounts of Te into the electrodeposited CdSe, i.e., by decreasing the mismatch between the deposited layer and the substrate. A further advantage of this technique is the ability to vary the bandgap continuously and controllably

Original language	English
Title of host publication	Electron microscopy 1994
Subtitle of host publication	proceedings of the 13th International Congress on Electron Microscopy
Publisher	Les Editions de Physique
Pages	345-346
ISBN (Print)	2868832261
State	Published - Jun 1994
Event	The 13th International Congress on Electron Microscopy - Paris , France Duration: 17 Jul 1994 → 22 Jul 1994

Conference

Conference	The 13th International Congress on Electron Microscopy
Country/Territory	France
City	Paris
Period	17/07/94 → 22/07/94

Cite this

@inproceedings{e184658f87dc48bdbe95aa0afa4ed8de,

title = "Epitaxial Electrodeposition of Semiconductor Quantum Dots: The Role of Lattice",

abstract = "Since the crystal size of semiconductor quantum dots (QDs) affects the optoelectronic properties of QDs, a method of controlling the size is important. It is demonstrated that CdSe QDs electrodeposited epitaxially on {111} Au can be tuned from <5 to ∼ 20 nm by introducing small amounts of Te into the electrodeposited CdSe, i.e., by decreasing the mismatch between the deposited layer and the substrate. A further advantage of this technique is the ability to vary the bandgap continuously and controllably",

author = "Y GOLAN and L MARGULIS and G HODES and JL HUTCHISON and Israel Rubinstein",

year = "1994",

month = jun,

language = "English",

isbn = "2868832261",

pages = "345--346",

booktitle = "Electron microscopy 1994",

publisher = "Les Editions de Physique",

address = "France",

note = "The 13th International Congress on Electron Microscopy ; Conference date: 17-07-1994 Through 22-07-1994",

}

TY - GEN

T1 - Epitaxial Electrodeposition of Semiconductor Quantum Dots

T2 - The 13th International Congress on Electron Microscopy

AU - GOLAN, Y

AU - MARGULIS, L

AU - HODES, G

AU - HUTCHISON, JL

AU - Rubinstein, Israel

PY - 1994/6

Y1 - 1994/6

N2 - Since the crystal size of semiconductor quantum dots (QDs) affects the optoelectronic properties of QDs, a method of controlling the size is important. It is demonstrated that CdSe QDs electrodeposited epitaxially on {111} Au can be tuned from <5 to ∼ 20 nm by introducing small amounts of Te into the electrodeposited CdSe, i.e., by decreasing the mismatch between the deposited layer and the substrate. A further advantage of this technique is the ability to vary the bandgap continuously and controllably

AB - Since the crystal size of semiconductor quantum dots (QDs) affects the optoelectronic properties of QDs, a method of controlling the size is important. It is demonstrated that CdSe QDs electrodeposited epitaxially on {111} Au can be tuned from <5 to ∼ 20 nm by introducing small amounts of Te into the electrodeposited CdSe, i.e., by decreasing the mismatch between the deposited layer and the substrate. A further advantage of this technique is the ability to vary the bandgap continuously and controllably

M3 - Conference contribution

SN - 2868832261

SP - 345

EP - 346

BT - Electron microscopy 1994

PB - Les Editions de Physique

Y2 - 17 July 1994 through 22 July 1994

ER -

Epitaxial Electrodeposition of Semiconductor Quantum Dots: The Role of Lattice

Abstract

Conference

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