Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate

Nobuhiko P. Kobayashi; Junko T. Kobayashi; Xingang Zhang; P. Daniel Dapkus; Daniel H. Rich

doi:10.1063/1.124030

Epitaxial lateral overgrowth of GaN over AlO_x surface formed on Si substrate

Nobuhiko P. Kobayashi, Junko T. Kobayashi, Xingang Zhang, P. Daniel Dapkus, Daniel H. Rich

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

An epitaxial lateral overgrowth (ELO) technique for the growth of `defect free' GaN that is entirely different than conventional ELO of GaN in terms of its geometrical structure and the materials involved is presented. The technique is based on the recent discoveries in which the epitaxial growth of GaN was demonstrated on AlO_x/Si substrates. This technique was further developed for ELO of GaN on Si.

Original language	English
Pages (from-to)	2836-2838
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	19
DOIs	https://doi.org/10.1063/1.124030
State	Published - 10 May 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.124030

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abstract = "An epitaxial lateral overgrowth (ELO) technique for the growth of `defect free' GaN that is entirely different than conventional ELO of GaN in terms of its geometrical structure and the materials involved is presented. The technique is based on the recent discoveries in which the epitaxial growth of GaN was demonstrated on AlOx/Si substrates. This technique was further developed for ELO of GaN on Si.",

author = "Kobayashi, {Nobuhiko P.} and Kobayashi, {Junko T.} and Xingang Zhang and Dapkus, {P. Daniel} and Rich, {Daniel H.}",

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AU - Kobayashi, Junko T.

AU - Zhang, Xingang

AU - Dapkus, P. Daniel

AU - Rich, Daniel H.

PY - 1999/5/10

Y1 - 1999/5/10

N2 - An epitaxial lateral overgrowth (ELO) technique for the growth of `defect free' GaN that is entirely different than conventional ELO of GaN in terms of its geometrical structure and the materials involved is presented. The technique is based on the recent discoveries in which the epitaxial growth of GaN was demonstrated on AlOx/Si substrates. This technique was further developed for ELO of GaN on Si.

AB - An epitaxial lateral overgrowth (ELO) technique for the growth of `defect free' GaN that is entirely different than conventional ELO of GaN in terms of its geometrical structure and the materials involved is presented. The technique is based on the recent discoveries in which the epitaxial growth of GaN was demonstrated on AlOx/Si substrates. This technique was further developed for ELO of GaN on Si.

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Epitaxial lateral overgrowth of GaN over AlO_x surface formed on Si substrate

Abstract

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