An epitaxial lateral overgrowth (ELO) technique for the growth of `defect free' GaN that is entirely different than conventional ELO of GaN in terms of its geometrical structure and the materials involved is presented. The technique is based on the recent discoveries in which the epitaxial growth of GaN was demonstrated on AlOx/Si substrates. This technique was further developed for ELO of GaN on Si.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)