Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate

Nobuhiko P. Kobayashi, Junko T. Kobayashi, Xingang Zhang, P. Daniel Dapkus, Daniel H. Rich

Research output: Contribution to journalArticlepeer-review

39 Scopus citations


An epitaxial lateral overgrowth (ELO) technique for the growth of `defect free' GaN that is entirely different than conventional ELO of GaN in terms of its geometrical structure and the materials involved is presented. The technique is based on the recent discoveries in which the epitaxial growth of GaN was demonstrated on AlOx/Si substrates. This technique was further developed for ELO of GaN on Si.

Original languageEnglish
Pages (from-to)2836-2838
Number of pages3
JournalApplied Physics Letters
Issue number19
StatePublished - 10 May 1999
Externally publishedYes


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