Error-correcting codes for rank modulation

Anxiao Jiang, Moshe Schwartz, Jehoshua Bruck

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

69 Scopus citations

Abstract

We investigate error-correcting codes for a novel storage technology for flash memories, the rank-modulation scheme. In this scheme, a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The resulting scheme eliminates the need for discrete cell levels, overcomes overshoot errors when programming cells (a serious problem that reduces the writing speed), and mitigates the problem of asymmetric errors. In this paper, we study the properties of error correction in rank modulation codes. We show that the adjacency graph of permutations is a subgraph of a multi-dimensional array of a special size, a property that enables code designs based on Leemetric codes. We present a one-error-correcting code whose size is at least half of the optimal size. We also present additional error-correcting codes and some related bounds.

Original languageEnglish
Title of host publicationProceedings - 2008 IEEE International Symposium on Information Theory, ISIT 2008
Pages1736-1740
Number of pages5
DOIs
StatePublished - 29 Sep 2008
Event2008 IEEE International Symposium on Information Theory, ISIT 2008 - Toronto, ON, Canada
Duration: 6 Jul 200811 Jul 2008

Publication series

NameIEEE International Symposium on Information Theory - Proceedings
ISSN (Print)2157-8101

Conference

Conference2008 IEEE International Symposium on Information Theory, ISIT 2008
Country/TerritoryCanada
CityToronto, ON
Period6/07/0811/07/08

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