Evaluation of microstructural damage and alteration of polytypes to determine the aging of silicon carbide

T. W. Koenig, L. Meshi, Z. Foxman, J. L. Riesterer, J. R. Kennedy, A. Landau, B. Mishra, D. L. Olson

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Irradiated silicon carbide (SiC) exhibits higher carrier content but a decrease in conductivity with increased irradiation. It was theorized that this conflicting data was due to structural damage due to irradiation. This theory was supported by the fact that non-irradiated 50μm thick SiC is transparent for visible light and the higher the irradiation dose, the material of the same thickness became less transparent. However, changes in microscopy and polyforms observed by transmission electron microscopy in SiC due to irradiation were minor. Although existence of different polymorphs of SiC was documented, direct proof of the proposed theory has not yet been achieved.

Original languageEnglish
Title of host publicationReview of Progress in Quantitative Nondestructive Evaluation, Volume 32
EditorsDale E. Chimenti, Donald O. Thompson
PublisherAmerican Institute of Physics Inc.
Pages1188-1195
Number of pages8
ISBN (Electronic)9780735411296
DOIs
StatePublished - 1 Jan 2013
Event39th Annual Review of Progress in Quantitative Nondestructive Evaluation, QNDE 2012 - Denver, United States
Duration: 15 Jul 201220 Jul 2012

Publication series

NameAIP Conference Proceedings
Volume1511
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference39th Annual Review of Progress in Quantitative Nondestructive Evaluation, QNDE 2012
Country/TerritoryUnited States
CityDenver
Period15/07/1220/07/12

Keywords

  • Nondestructive Evaluation
  • Nuclear Transmutation
  • Polyforms
  • Silicon Carbide
  • Transmission Electron Microscopy

ASJC Scopus subject areas

  • General Physics and Astronomy

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