Excitation and deexcitation of Er3+ in crystalline silicon

P. G. Kik, M. J.A. De Dood, K. Kikoin, A. Polman

Research output: Contribution to journalArticlepeer-review

81 Scopus citations


Temperature dependent measurements of the 1.54 μm photoluminescence of Er implanted N codoped crystalline Si are made. Upon increasing the temperature from 12 to 150 K, the intensity quenches by more than a factor thousand, while the lifetime quenches from 420 to 3 μs. The quenching processes are described by an impurity Auger energy transfer model that includes bound exciton dissociation and a nonradiative energy backtransfer process. Electron and hole trap levels are determined. Direct evidence for a backtransfer process follows from spectral response measurements on an Er-implanted Si solar cell.

Original languageEnglish
Pages (from-to)1721-1723
Number of pages3
JournalApplied Physics Letters
Issue number13
StatePublished - 31 Mar 1997
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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