Excitation-energy dependence in the L2,3 fluorescence spectrum of Si

J. E. Rubensson, D. Mueller, R. Shuker, D. L. Ederer, C. H. Zhang, J. Jia, T. A. Callcott

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

The L2,3 emission spectrum of c-Si, excited by monochromatized synchrotron radiation, has been recorded with a 5-m Rowland spectrometer. Dramatic spectral changes are observed as the excitation energy is varied from the 2p binding energy up to 144 eV. It is proposed that a spectator electron, close to the bottom of the conduction band, influences the emission spectrum. The observations suggest that intraband shakeup is important in the excitation process, and that a population of low-lying levels, via initial-state shakeup, influences the high-energy-excited Si L emission spectrum.

Original languageEnglish
Pages (from-to)1047-1050
Number of pages4
JournalPhysical Review Letters
Volume64
Issue number9
DOIs
StatePublished - 1 Jan 1990
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy

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