Experimental investigation of transient phenomena in solar cell panels

M. A. Slonim; A. L. Tslaf

doi:10.1109/EEIS.1989.720169

Experimental investigation of transient phenomena in solar cell panels

M. A. Slonim, A. L. Tslaf

Department of Electrical & Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The transient phenomena arising in a silicon solar cell due to instantaneous changes of the load are investigated. It is shown that: 1. The short circuit transient process has the character of a damped oscillation; 2. The open circuit transient process has the character of an exponential growth. The differences between the theory used today and the experimental results are discussed. An equivalent diagram corresponding to observed results is proposed.

Original language	English
DOIs	https://doi.org/10.1109/EEIS.1989.720169
State	Published - 1 Jan 1989
Event	16th Conference of Electrical and Electronics Engineers in Israel, EEIS 1989 - Tel-Aviv, Israel Duration: 7 Mar 1989 → 9 Mar 1989

Conference

Conference	16th Conference of Electrical and Electronics Engineers in Israel, EEIS 1989
Country/Territory	Israel
City	Tel-Aviv
Period	7/03/89 → 9/03/89

ASJC Scopus subject areas

Software
Computer Networks and Communications
Signal Processing
Electrical and Electronic Engineering
Instrumentation

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/EEIS.1989.720169

Cite this

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title = "Experimental investigation of transient phenomena in solar cell panels",

abstract = "The transient phenomena arising in a silicon solar cell due to instantaneous changes of the load are investigated. It is shown that: 1. The short circuit transient process has the character of a damped oscillation; 2. The open circuit transient process has the character of an exponential growth. The differences between the theory used today and the experimental results are discussed. An equivalent diagram corresponding to observed results is proposed.",

author = "Slonim, {M. A.} and Tslaf, {A. L.}",

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AU - Tslaf, A. L.

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N2 - The transient phenomena arising in a silicon solar cell due to instantaneous changes of the load are investigated. It is shown that: 1. The short circuit transient process has the character of a damped oscillation; 2. The open circuit transient process has the character of an exponential growth. The differences between the theory used today and the experimental results are discussed. An equivalent diagram corresponding to observed results is proposed.

AB - The transient phenomena arising in a silicon solar cell due to instantaneous changes of the load are investigated. It is shown that: 1. The short circuit transient process has the character of a damped oscillation; 2. The open circuit transient process has the character of an exponential growth. The differences between the theory used today and the experimental results are discussed. An equivalent diagram corresponding to observed results is proposed.

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DO - 10.1109/EEIS.1989.720169

M3 - Paper

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T2 - 16th Conference of Electrical and Electronics Engineers in Israel, EEIS 1989

Y2 - 7 March 1989 through 9 March 1989

ER -

Experimental investigation of transient phenomena in solar cell panels

Abstract

Conference

ASJC Scopus subject areas

UN SDGs

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