The transient phenomena arising in a silicon solar cell due to instantaneous changes of the load are investigated. It is shown that: 1. The short circuit transient process has the character of a damped oscillation; 2. The open circuit transient process has the character of an exponential growth. The differences between the theory used today and the experimental results are discussed. An equivalent diagram corresponding to observed results is proposed.
|Journal||IEEE Convention of Electrical & Electronics Engineers in Israel (IEEEI)|
|State||Published - 1 Jan 1989|
|Event||16th Conference of Electrical and Electronics Engineers in Israel, EEIS 1989 - Tel-Aviv, Israel|
Duration: 7 Mar 1989 → 9 Mar 1989