TY - JOUR
T1 - Experimental investigation of transient phenomena in solar cell panels
AU - Slonim, M. A.
AU - Tslaf, A. L.
N1 - Publisher Copyright:
© 1990 IEEE.
PY - 1989/1/1
Y1 - 1989/1/1
N2 - The transient phenomena arising in a silicon solar cell due to instantaneous changes of the load are investigated. It is shown that: 1. The short circuit transient process has the character of a damped oscillation; 2. The open circuit transient process has the character of an exponential growth. The differences between the theory used today and the experimental results are discussed. An equivalent diagram corresponding to observed results is proposed.
AB - The transient phenomena arising in a silicon solar cell due to instantaneous changes of the load are investigated. It is shown that: 1. The short circuit transient process has the character of a damped oscillation; 2. The open circuit transient process has the character of an exponential growth. The differences between the theory used today and the experimental results are discussed. An equivalent diagram corresponding to observed results is proposed.
UR - http://www.scopus.com/inward/record.url?scp=85067348860&partnerID=8YFLogxK
U2 - 10.1109/EEIS.1989.720169
DO - 10.1109/EEIS.1989.720169
M3 - Conference article
AN - SCOPUS:85067348860
JO - Electrical and ELectronic Engineers in Israel (IEEE)
JF - Electrical and ELectronic Engineers in Israel (IEEE)
SN - 0899-6156
T2 - 16th Conference of Electrical and Electronics Engineers in Israel, EEIS 1989
Y2 - 7 March 1989 through 9 March 1989
ER -