Abstract
In this paper we present a study of infrared spectral thermal emission from various grating structures. The structures include various lamellar grating layers of metals, silicon or GaAs on the same semiconductor substrate. The gratings have different periods, groove widths and groove depths, with feature sizes comparable to the radiated measurement wavelengths (2.5 - 25 μm). The measurement temperatures for all samples were in the range 27 - 740 °K. Lateral and vertical optical confinement in the grating layers can occur. In the semiconductor grating layer in the case where the material is partially transparent lateral optical coupling exist whish affect the spectral emission. In addition vertical confinement of the electromagnetic field exists which corresponds to "organ-pipe" like modes. The vertical confinement is enhanced in the case where the grating structure is coated with metal or degenerate semiconductor. These phenomena resulted in thermal emission spectral oscillation for the wavelength range larger than the grating period.
| Original language | English |
|---|---|
| Pages (from-to) | 40-43 |
| Number of pages | 4 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5360 |
| DOIs | |
| State | Published - 13 Sep 2004 |
| Event | Photonic Crystal Materials and Devices II - San Jose, CA, United States Duration: 26 Jan 2004 → 29 Jan 2004 |
Keywords
- IR radiation
- Microstructures
- Thermal emission
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering