Fabrication of nylon/fullerene polymer memory

Manuvel Jayan, Rosemary Davis, M. P. Karthik, K. Devika, G. Vijay Kumar, B. Sriraj, P. Predeep

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Two terminal Organic memories in passive matrix array form with device structure, Al/Nylon/ (Nylon+C60)/Nylon/ Al are fabricated. The current-voltage measurements showed hysteresis and the devices are thoroughly characterized for write-read-erase-read cycles. The control over the dispersion concentration, capacity of fullerene to readily accept electrons and the constant diameter of fullerene made possible uniform device fabrication with reproducible results. Scanning electron micrographs indicated that the device thickness remained uniform in the range of 19 micrometers.

Original languageEnglish
Title of host publicationLet There Be Light
Subtitle of host publicationReflections of a Congress on Light
EditorsP. Predeep, A. Sujith
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735415218
DOIs
StatePublished - 2 Jun 2017
Externally publishedYes
EventA Conference on Light, OPTICS 2017 - Kerala, India
Duration: 9 Jan 201711 Jan 2017

Publication series

NameAIP Conference Proceedings
Volume1849
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceA Conference on Light, OPTICS 2017
Country/TerritoryIndia
CityKerala
Period9/01/1711/01/17

ASJC Scopus subject areas

  • General Physics and Astronomy

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