Fabrication of sub-μm bipolar transistor structures by scanning probe microscopy

Shachar Richter, David Cahen, Sidney R. Cohen, Konstantin Gartsman, Vera Lyakhovitskaya, Yishay Manassen

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


We show how sub-μm sized transistor structures (down to 50 nm cross section) can be fabricated by thermally assisted electromigration of mobile dopants inside the semiconductor CuInSe2. Small device structures are fabricated by application of an electric field to the sample via the contact, defined by a conducting atomic force microscope tip. The structures are characterized by nm scale scanning spreading resistance and scanning capacitance measurements to reveal the inhomogeneous doping profiles created by the electric field.

Original languageEnglish
Pages (from-to)1868-1870
Number of pages3
JournalApplied Physics Letters
Issue number13
StatePublished - 1 Dec 1998
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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