We show how sub-μm sized transistor structures (down to 50 nm cross section) can be fabricated by thermally assisted electromigration of mobile dopants inside the semiconductor CuInSe2. Small device structures are fabricated by application of an electric field to the sample via the contact, defined by a conducting atomic force microscope tip. The structures are characterized by nm scale scanning spreading resistance and scanning capacitance measurements to reveal the inhomogeneous doping profiles created by the electric field.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1 Dec 1998|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)