Keyphrases
3D FEM
25%
Actual Temperature
25%
Aluminum Gallium Nitride (AlGaN)
50%
Base Plate
25%
Calibrated Simulation
25%
Channel Temperature
100%
Device Operation
25%
Device Performance
25%
Device Reliability
50%
Direct Temperature Measurement
25%
Fast Estimation
100%
Field Plate
25%
GaN HEMT
100%
Gate Edge
25%
Heat Dissipation
25%
High Electron Mobility Transistor
25%
High-power RF
25%
Hot Temperature
50%
IR Image
25%
Multi-parameter
25%
Operating Conditions
100%
Peak Power
25%
Plate Temperature
25%
Power Dissipation
50%
Proper Design
25%
Pulse Duty Cycle
25%
Pulse Width
25%
Pulsed RF
50%
Reliability Study
25%
Self-heating
25%
SiC Substrate
25%
Temperature Measurement
50%
Temperature Pulsations
25%
Thermal Behavior
25%
Thermal Characterization
25%
Thermal Imaging
25%
Thermal Simulation
50%
Transistor
75%
Transistor Device
25%
Working Conditions
25%
Engineering
Baseplate
25%
Device Performance
25%
Duty Cycle
25%
Energy Dissipation
50%
Finite Element Method
25%
Heat Losses
25%
Hot Spot
75%
Input Parameter
25%
Measure Temperature
25%
Measured Temperature
25%
Nitride
100%
Peak Power
25%
Proper Design
25%
Pulse Duration
25%
Reliability Study
25%
Simulation Result
25%
Thermal Behavior
25%
Thermal Characterization
25%
Thermal Simulation
50%