Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures

Aviya Bennett; Avraham Chelly; Avi Karsenty; Ilan Gadasi; Zvi Priel; Yaakov Mandelbaum; Tiecheng Lu; Issai Shlimak; Zeev Zalevsky

doi:10.1117/1.JNP.10.036001

Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures

Aviya Bennett, Avraham Chelly, Avi Karsenty, Ilan Gadasi, Zvi Priel, Yaakov Mandelbaum, Tiecheng Lu, Issai Shlimak, Zeev Zalevsky

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO₂ film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.

Original language	English
Article number	036001
Journal	Journal of Nanophotonics
Volume	10
Issue number	3
DOIs	https://doi.org/10.1117/1.JNP.10.036001
State	Published - 1 Jul 2016
Externally published	Yes

Keywords

Metal-oxide-semiconductor capacitor
capacitance-voltage measurement
germanium
nanocrystal
optoelectronic effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/1.JNP.10.036001

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title = "Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures",

abstract = "The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.",

keywords = "Metal-oxide-semiconductor capacitor, capacitance-voltage measurement, germanium, nanocrystal, optoelectronic effect",

author = "Aviya Bennett and Avraham Chelly and Avi Karsenty and Ilan Gadasi and Zvi Priel and Yaakov Mandelbaum and Tiecheng Lu and Issai Shlimak and Zeev Zalevsky",

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AU - Bennett, Aviya

AU - Chelly, Avraham

AU - Karsenty, Avi

AU - Gadasi, Ilan

AU - Priel, Zvi

AU - Mandelbaum, Yaakov

AU - Lu, Tiecheng

AU - Shlimak, Issai

AU - Zalevsky, Zeev

PY - 2016/7/1

Y1 - 2016/7/1

N2 - The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.

AB - The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.

KW - Metal-oxide-semiconductor capacitor

KW - capacitance-voltage measurement

KW - germanium

KW - nanocrystal

KW - optoelectronic effect

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U2 - 10.1117/1.JNP.10.036001

DO - 10.1117/1.JNP.10.036001

M3 - Article

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VL - 10

JO - Journal of Nanophotonics

JF - Journal of Nanophotonics

IS - 3

M1 - 036001

ER -

Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures

Abstract

Keywords

ASJC Scopus subject areas

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