The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.
- Metal-oxide-semiconductor capacitor
- capacitance-voltage measurement
- optoelectronic effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics