Fast-response symmetric coplanar Ni/AlGaInP/Ni visible photodetector

Keyphrases

• Fast Response 100%
• Coplanar 100%
• AlGaInP 100%
• Visible-light Photodetector 100%
• Responsivity 50%
• Photocurrent 50%
• Crystallinity 50%
• Photogenerated Electron-hole Pairs 50%
• Wavelength Range 50%
• High-resolution 50%
• Current-voltage Characteristics 50%
• Photoresponse 50%
• Photodetector 50%
• Recombination 50%
• Two-channel 50%
• Applied Bias 50%
• Photoluminescence 50%
• Rise Time 50%
• Barrier Height 50%
• Optical Power 50%
• Optical Intensity 50%
• GaAs Substrate 50%
• Maximum Peak 50%
• Recombination Centers 50%
• Powers of 2 50%
• Photodetection 50%
• Alloy Composition 50%
• Epitaxially Grown 50%
• Ideality Factor 50%
• Photoluminescence Studies 50%
• Trapping Centers 50%
• Forbidden Gap 50%
• Power Dependence 50%
• Rocking Curve 50%
• Low-temperature Photoluminescence 50%
• Dark Current-voltage 50%
• Linear Power 50%
• Defect Levels 50%
• Decay Characteristics 50%
• Temporal Quality 50%
• Metal-semiconductor-metal Structure 50%
• Nickel Contacts 50%
• Semi-insulating GaAs 50%
• Two-diode Model 50%
• Height Factor 50%

Engineering

• Fast Response 100%
• Photodetector 100%
• Thin Films 50%
• Low-Temperature 50%
• Defects 50%
• High Resolution 50%
• Current-Voltage Characteristic 50%
• Optical Power 50%
• Photocurrent 50%
• Crystallinity 50%
• Optical Intensity 50%
• Responsivity 50%
• Gaas Substrate 50%
• Hole Pair 50%
• Photodetection 50%
• Ideality Factor 50%
• Barrier Height 50%
• Rise Time 50%
• Recombination Centre 50%
• Alloy Composition 50%
• Two-Diode Model 50%
• Grown Material 50%

Material Science

• Photoluminescence 100%
• Thin Films 50%
• Gallium Arsenide 50%
• Current-Voltage Characteristic 50%
• Optical Power 50%