Features of the structure and defect states in hydrogenated polymorphous silicon films

A. V. Emelyanov; E. A. Konstantinova; P. A. Forsh; A. G. Kazanskii; M. V. Khenkin; N. N. Petrova; E. I. Terukov; D. A. Kirilenko; N. A. Bert; S. G. Konnikov; P. K. Kashkarov

doi:10.1134/S0021364013080079

Features of the structure and defect states in hydrogenated polymorphous silicon films

A. V. Emelyanov, E. A. Konstantinova, P. A. Forsh, A. G. Kazanskii, M. V. Khenkin, N. N. Petrova, E. I. Terukov, D. A. Kirilenko, N. A. Bert, S. G. Konnikov, P. K. Kashkarov

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Abstract

The structural and electronic properties of thin hydrogenated polymorphous silicon films obtained by plasma-enhanced chemical vapor deposition from hydrogen (H₂) and monosilane (SiH₄) gas mixture have been studied by means of transmission electron microscopy, electron paramagnetic resonance (EPR) spectroscopy, and Raman spectroscopy. It has been established that the studied films consist of the amorphous phase containing silicon nanocrystalline inclusions with the average size on the order of 4-5 nm and the volume fraction of 10%. A signal was observed in the hydrogenated polymorphous silicon films during the EPR investigation that is attributed to the electrons trapped in the conduction band tail of microcrystalline silicon. It has been shown that the introduction of a small fraction of nanocrystals into the amorphous silicon films nonadditively changes the electronic properties of the material.

Original language	English
Pages (from-to)	466-469
Number of pages	4
Journal	JETP Letters
Volume	97
Issue number	8
DOIs	https://doi.org/10.1134/S0021364013080079
State	Published - 1 Jun 2013
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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title = "Features of the structure and defect states in hydrogenated polymorphous silicon films",

abstract = "The structural and electronic properties of thin hydrogenated polymorphous silicon films obtained by plasma-enhanced chemical vapor deposition from hydrogen (H2) and monosilane (SiH4) gas mixture have been studied by means of transmission electron microscopy, electron paramagnetic resonance (EPR) spectroscopy, and Raman spectroscopy. It has been established that the studied films consist of the amorphous phase containing silicon nanocrystalline inclusions with the average size on the order of 4-5 nm and the volume fraction of 10%. A signal was observed in the hydrogenated polymorphous silicon films during the EPR investigation that is attributed to the electrons trapped in the conduction band tail of microcrystalline silicon. It has been shown that the introduction of a small fraction of nanocrystals into the amorphous silicon films nonadditively changes the electronic properties of the material.",

author = "Emelyanov, {A. V.} and Konstantinova, {E. A.} and Forsh, {P. A.} and Kazanskii, {A. G.} and Khenkin, {M. V.} and Petrova, {N. N.} and Terukov, {E. I.} and Kirilenko, {D. A.} and Bert, {N. A.} and Konnikov, {S. G.} and Kashkarov, {P. K.}",

note = "Funding Information: We are grateful to Prof. P. Roca i Cabarrocas ({\'E}cole polytechnique, France) for pm Si:H samples and to S.V. Zabotnov (Moscow State University) for fruitful discussions. This work was performed using the equip ment of the Center of Collective Use, Moscow State University, and was supported by the Ministry of Edu cation and Science of the Russian Federation (state contract no. 16.552.11.7081), by the Presidium of the Russian Academy of Sciences (program no. 24 “Fun damentals of Nanostructure and Nanomaterial Tech nologies”), and by the Russian Foundation for Basic Research (project no. 12 02 33033).",

year = "2013",

month = jun,

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doi = "10.1134/S0021364013080079",

language = "English",

volume = "97",

pages = "466--469",

journal = "JETP Letters",

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T1 - Features of the structure and defect states in hydrogenated polymorphous silicon films

AU - Emelyanov, A. V.

AU - Konstantinova, E. A.

AU - Forsh, P. A.

AU - Kazanskii, A. G.

AU - Khenkin, M. V.

AU - Petrova, N. N.

AU - Terukov, E. I.

AU - Kirilenko, D. A.

AU - Bert, N. A.

AU - Konnikov, S. G.

AU - Kashkarov, P. K.

N1 - Funding Information: We are grateful to Prof. P. Roca i Cabarrocas (École polytechnique, France) for pm Si:H samples and to S.V. Zabotnov (Moscow State University) for fruitful discussions. This work was performed using the equip ment of the Center of Collective Use, Moscow State University, and was supported by the Ministry of Edu cation and Science of the Russian Federation (state contract no. 16.552.11.7081), by the Presidium of the Russian Academy of Sciences (program no. 24 “Fun damentals of Nanostructure and Nanomaterial Tech nologies”), and by the Russian Foundation for Basic Research (project no. 12 02 33033).

PY - 2013/6/1

Y1 - 2013/6/1

N2 - The structural and electronic properties of thin hydrogenated polymorphous silicon films obtained by plasma-enhanced chemical vapor deposition from hydrogen (H2) and monosilane (SiH4) gas mixture have been studied by means of transmission electron microscopy, electron paramagnetic resonance (EPR) spectroscopy, and Raman spectroscopy. It has been established that the studied films consist of the amorphous phase containing silicon nanocrystalline inclusions with the average size on the order of 4-5 nm and the volume fraction of 10%. A signal was observed in the hydrogenated polymorphous silicon films during the EPR investigation that is attributed to the electrons trapped in the conduction band tail of microcrystalline silicon. It has been shown that the introduction of a small fraction of nanocrystals into the amorphous silicon films nonadditively changes the electronic properties of the material.

AB - The structural and electronic properties of thin hydrogenated polymorphous silicon films obtained by plasma-enhanced chemical vapor deposition from hydrogen (H2) and monosilane (SiH4) gas mixture have been studied by means of transmission electron microscopy, electron paramagnetic resonance (EPR) spectroscopy, and Raman spectroscopy. It has been established that the studied films consist of the amorphous phase containing silicon nanocrystalline inclusions with the average size on the order of 4-5 nm and the volume fraction of 10%. A signal was observed in the hydrogenated polymorphous silicon films during the EPR investigation that is attributed to the electrons trapped in the conduction band tail of microcrystalline silicon. It has been shown that the introduction of a small fraction of nanocrystals into the amorphous silicon films nonadditively changes the electronic properties of the material.

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DO - 10.1134/S0021364013080079

M3 - Article

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VL - 97

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EP - 469

JO - JETP Letters

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ER -

Features of the structure and defect states in hydrogenated polymorphous silicon films

Abstract

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