Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron

A. Vardi; S. Sakr; J. Mangeney; P. K. Kandaswamy; E. Monroy; M. Tchernycheva; S. E. Schacham; F. H. Julien; G. Bahir

doi:10.1063/1.3660583

Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron

A. Vardi, S. Sakr, J. Mangeney, P. K. Kandaswamy, E. Monroy, M. Tchernycheva, S. E. Schacham, F. H. Julien, G. Bahir

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The ultra fast carrier dynamic in GaN/AlGaN quantum cascade detector was investigated using a time-resolved bias-lead monitoring technique. It is demonstrated that the intrinsic speed limitation, governed by the carrier transit time, is smaller than 1 ps, corresponding to a frequency cut off above 200 GHz.

Original language	English GB
Article number	202111
Pages (from-to)	202111
Journal	Applied Physics Letters
Volume	99
Issue number	20
DOIs	https://doi.org/10.1063/1.3660583
State	Published - 1 Nov 2011
Externally published	Yes

Keywords

aluminium compounds
gallium compounds
III-V semiconductors
infrared detectors
semiconductor quantum wells
wide band gap semiconductors
Bolometers
infrared submillimeter wave microwave and radiowave receivers and detectors

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10.1063/1.3660583

http://adsabs.harvard.edu/abs/2011ApPhL..99t2111V

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title = "Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron",

abstract = "The ultra fast carrier dynamic in GaN/AlGaN quantum cascade detector was investigated using a time-resolved bias-lead monitoring technique. It is demonstrated that the intrinsic speed limitation, governed by the carrier transit time, is smaller than 1 ps, corresponding to a frequency cut off above 200 GHz.",

keywords = "aluminium compounds, gallium compounds, III-V semiconductors, infrared detectors, semiconductor quantum wells, wide band gap semiconductors, Bolometers, infrared submillimeter wave microwave and radiowave receivers and detectors",

author = "A. Vardi and S. Sakr and J. Mangeney and Kandaswamy, {P. K.} and E. Monroy and M. Tchernycheva and Schacham, {S. E.} and Julien, {F. H.} and G. Bahir",

note = "Funding Information: The financial support of EC FP7 FET project “UNITRIDE” contract No. 233950 is acknowledged.",

year = "2011",

month = nov,

day = "1",

doi = "10.1063/1.3660583",

language = "אנגלית",

volume = "99",

pages = "202111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron

AU - Vardi, A.

AU - Sakr, S.

AU - Mangeney, J.

AU - Kandaswamy, P. K.

AU - Monroy, E.

AU - Tchernycheva, M.

AU - Schacham, S. E.

AU - Julien, F. H.

AU - Bahir, G.

N1 - Funding Information: The financial support of EC FP7 FET project “UNITRIDE” contract No. 233950 is acknowledged.

PY - 2011/11/1

Y1 - 2011/11/1

N2 - The ultra fast carrier dynamic in GaN/AlGaN quantum cascade detector was investigated using a time-resolved bias-lead monitoring technique. It is demonstrated that the intrinsic speed limitation, governed by the carrier transit time, is smaller than 1 ps, corresponding to a frequency cut off above 200 GHz.

AB - The ultra fast carrier dynamic in GaN/AlGaN quantum cascade detector was investigated using a time-resolved bias-lead monitoring technique. It is demonstrated that the intrinsic speed limitation, governed by the carrier transit time, is smaller than 1 ps, corresponding to a frequency cut off above 200 GHz.

KW - aluminium compounds

KW - gallium compounds

KW - III-V semiconductors

KW - infrared detectors

KW - semiconductor quantum wells

KW - wide band gap semiconductors

KW - Bolometers

KW - infrared submillimeter wave microwave and radiowave receivers and detectors

UR - http://www.scopus.com/inward/record.url?scp=81855219031&partnerID=8YFLogxK

U2 - 10.1063/1.3660583

DO - 10.1063/1.3660583

M3 - מאמר

SN - 0003-6951

VL - 99

SP - 202111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 202111

ER -

Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron

Abstract

Keywords

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