Femtosecond laser crystallization of boron-doped amorphous hydrogenated silicon films

P. D. Rybalko; M. V. Khenkin; P. A. Forsh; R. Drevinskas; A. N. Matsukatova; P. Kazansky; A. G. Kazanskii

doi:10.21272/jnep.8(3).03038

Femtosecond laser crystallization of boron-doped amorphous hydrogenated silicon films

P. D. Rybalko, M. V. Khenkin, P. A. Forsh, R. Drevinskas, A. N. Matsukatova, P. Kazansky, A. G. Kazanskii

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

Original language	English
Article number	03038
Journal	Journal of Nano- and Electronic Physics
Volume	8
Issue number	3
DOIs	https://doi.org/10.21272/jnep.8(3).03038
State	Published - 1 Jan 2016
Externally published	Yes

Keywords

Amorphous hydrogenated silicon
Conductivity
Femtosecond laser crystallization
Raman spectra
Semiconductors
Thin films

ASJC Scopus subject areas

Radiation
General Materials Science
Condensed Matter Physics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.21272/jnep.8(3).03038

Cite this

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title = "Femtosecond laser crystallization of boron-doped amorphous hydrogenated silicon films",

abstract = "Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.",

keywords = "Amorphous hydrogenated silicon, Conductivity, Femtosecond laser crystallization, Raman spectra, Semiconductors, Thin films",

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doi = "10.21272/jnep.8(3).03038",

language = "English",

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TY - JOUR

T1 - Femtosecond laser crystallization of boron-doped amorphous hydrogenated silicon films

AU - Rybalko, P. D.

AU - Khenkin, M. V.

AU - Forsh, P. A.

AU - Drevinskas, R.

AU - Matsukatova, A. N.

AU - Kazansky, P.

AU - Kazanskii, A. G.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

AB - Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

KW - Amorphous hydrogenated silicon

KW - Conductivity

KW - Femtosecond laser crystallization

KW - Raman spectra

KW - Semiconductors

KW - Thin films

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Femtosecond laser crystallization of boron-doped amorphous hydrogenated silicon films

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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