Femtosecond laser crystallization of boron-doped amorphous hydrogenated silicon films

P. D. Rybalko, M. V. Khenkin, P. A. Forsh, R. Drevinskas, A. N. Matsukatova, P. Kazansky, A. G. Kazanskii

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

Original languageEnglish
Article number03038
JournalJournal of Nano- and Electronic Physics
Issue number3
StatePublished - 1 Jan 2016
Externally publishedYes


  • Amorphous hydrogenated silicon
  • Conductivity
  • Femtosecond laser crystallization
  • Raman spectra
  • Semiconductors
  • Thin films

ASJC Scopus subject areas

  • Radiation
  • General Materials Science
  • Condensed Matter Physics


Dive into the research topics of 'Femtosecond laser crystallization of boron-doped amorphous hydrogenated silicon films'. Together they form a unique fingerprint.

Cite this