TY - JOUR
T1 - Femtosecond laser induced crystallization of hydrogenated amorphous silicon for photovoltaic applications
AU - Emelyanov, Andrey V.
AU - Khenkin, Mark V.
AU - Kazanskii, Andrey G.
AU - Forsh, Pavel A.
AU - Kashkarov, Pavel K.
AU - Gecevicius, Mindaugas
AU - Beresna, Martynas
AU - Kazansky, Peter G.
N1 - Funding Information:
The authors are grateful to Dr O.I. Konkov (Ioffe Physical Technical Institute) for a-Si:H film preparation, A.A. Khomich (Prokhorov General Physics Institute) for Raman measurements and Dr. V.B. Zaitsev (Lomonosov Moscow State University) for AFM measurements. This work was supported by the project FEMTOPRINT, financed by the European Commission Factories of the Future program (FP7/NMP/project no. 260103 ), the Ministry of Education and Science of the Russian Federation (contract no. 16.552.11.7081 ) and the Russian Foundation for Basic Research (projects 12-02-00751-а and 12-02-33033 ).
PY - 2014/4/1
Y1 - 2014/4/1
N2 - Femtosecond laser assisted crystallization is used to produce nanocrystalline silicon from hydrogenated amorphous silicon. Changes in structural, optical, electrical and photoelectric properties of laser modified amorphous silicon were investigated. Laser treated films were characterized using atomic force microscopy, Raman spectroscopy, constant photocurrent method and current measurements. Crystalline volume fraction as well as conductivity of laser irradiated films increased with the applied laser fluence, while hydrogen concentration in the films was found to decrease with the fluence. Spectral dependences of absorption coefficient, measured by constant photocurrent method, are discussed in terms of hydrogen out-effusion and additional defect state formation in silicon films during the laser treatment.
AB - Femtosecond laser assisted crystallization is used to produce nanocrystalline silicon from hydrogenated amorphous silicon. Changes in structural, optical, electrical and photoelectric properties of laser modified amorphous silicon were investigated. Laser treated films were characterized using atomic force microscopy, Raman spectroscopy, constant photocurrent method and current measurements. Crystalline volume fraction as well as conductivity of laser irradiated films increased with the applied laser fluence, while hydrogen concentration in the films was found to decrease with the fluence. Spectral dependences of absorption coefficient, measured by constant photocurrent method, are discussed in terms of hydrogen out-effusion and additional defect state formation in silicon films during the laser treatment.
KW - Absorption
KW - Amorphous silicon
KW - Conductivity and photoconductivity
KW - Constant photocurrent method
KW - Femtosecond laser crystallization
KW - Hydrogen content
UR - http://www.scopus.com/inward/record.url?scp=84896402374&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2013.12.030
DO - 10.1016/j.tsf.2013.12.030
M3 - Article
AN - SCOPUS:84896402374
SN - 0040-6090
VL - 556
SP - 410
EP - 413
JO - Thin Solid Films
JF - Thin Solid Films
ER -
