Femtosecond laser induced crystallization of hydrogenated amorphous silicon for photovoltaic applications

Andrey V. Emelyanov, Mark V. Khenkin, Andrey G. Kazanskii, Pavel A. Forsh, Pavel K. Kashkarov, Mindaugas Gecevicius, Martynas Beresna, Peter G. Kazansky

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


Femtosecond laser assisted crystallization is used to produce nanocrystalline silicon from hydrogenated amorphous silicon. Changes in structural, optical, electrical and photoelectric properties of laser modified amorphous silicon were investigated. Laser treated films were characterized using atomic force microscopy, Raman spectroscopy, constant photocurrent method and current measurements. Crystalline volume fraction as well as conductivity of laser irradiated films increased with the applied laser fluence, while hydrogen concentration in the films was found to decrease with the fluence. Spectral dependences of absorption coefficient, measured by constant photocurrent method, are discussed in terms of hydrogen out-effusion and additional defect state formation in silicon films during the laser treatment.

Original languageEnglish
Pages (from-to)410-413
Number of pages4
JournalThin Solid Films
StatePublished - 1 Apr 2014
Externally publishedYes


  • Absorption
  • Amorphous silicon
  • Conductivity and photoconductivity
  • Constant photocurrent method
  • Femtosecond laser crystallization
  • Hydrogen content

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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