Fin Reveal RIE Process Investigation

Chunpui Kwan, Hongliang Shen, Edward Reis, Cassidy Dineen, Tu Q. Nguyen, Lillian Li, Yevgeny Lifshitz, Robert Brown, Lan Yang, Xiaoli He, James Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Oxide selectivity at Fin reveal dry etching is studied by varying the CxFy gas flow and etch time. Defectivity and yield of the resulting FinFET devices are compared. Also, a new detection method is evaluated for early warnings of defects due to oxide selectivity. Such learning may improve the efficiency of enhanced performance FinFET devices and reduce fabrication cost.

Original languageEnglish
Title of host publication2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2023
PublisherInstitute of Electrical and Electronics Engineers
ISBN (Electronic)9781665456395
DOIs
StatePublished - 1 Jan 2023
Externally publishedYes
Event34th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2023 - Saratoga Springs, United States
Duration: 1 May 20234 May 2023

Publication series

NameASMC (Advanced Semiconductor Manufacturing Conference) Proceedings
Volume2023-May
ISSN (Print)1078-8743

Conference

Conference34th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2023
Country/TerritoryUnited States
CitySaratoga Springs
Period1/05/234/05/23

Keywords

  • Fin Reveal
  • FinFET
  • Inline Detection
  • Oxide Residue
  • Plasma Etch
  • RIE

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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