@inproceedings{25bbb9ea94bb42a0b7b83a2aede88834,
title = "Fin Reveal RIE Process Investigation",
abstract = "Oxide selectivity at Fin reveal dry etching is studied by varying the CxFy gas flow and etch time. Defectivity and yield of the resulting FinFET devices are compared. Also, a new detection method is evaluated for early warnings of defects due to oxide selectivity. Such learning may improve the efficiency of enhanced performance FinFET devices and reduce fabrication cost.",
keywords = "Fin Reveal, FinFET, Inline Detection, Oxide Residue, Plasma Etch, RIE",
author = "Chunpui Kwan and Hongliang Shen and Edward Reis and Cassidy Dineen and Nguyen, \{Tu Q.\} and Lillian Li and Yevgeny Lifshitz and Robert Brown and Lan Yang and Xiaoli He and James Chen",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 34th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2023 ; Conference date: 01-05-2023 Through 04-05-2023",
year = "2023",
month = jan,
day = "1",
doi = "10.1109/ASMC57536.2023.10121135",
language = "English",
series = "ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings",
publisher = "Institute of Electrical and Electronics Engineers",
booktitle = "2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2023",
address = "United States",
}