Formation of C54 TiSi2 in a cosputtered (Ti + Si) blanket film in the presence of a TiN capping layer

Joshua Pelleg; Y. Shor

doi:10.1016/S0167-9317(03)00230-2

Formation of C54 TiSi₂ in a cosputtered (Ti + Si) blanket film in the presence of a TiN capping layer

Joshua Pelleg, Y. Shor

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Formation of C54 TiSi₂ was investigated in cosputtered (Ti + Si) films with and without a TiN capping layer following rapid thermal annealing (RTA). The first phase observed in the specimens was Ti₅Si₃ regardless if a TiN overlayer was present. Free energy calculations indicate the preference of Ti₅Si₃ formation as the first phase. C54 TiSi₂ started to form at lower temperatures in the specimens capped with TiN. Its formation also occurred at shorter annealing times at some given temperature. The influence of a TiN capping layer on enhancing C54 TiSi₂ formation is attributed to the stress induced by this layer into the (Ti+Si) film. The X-ray diffraction (XRD) method was used to evaluate the stress in the TiN film. Free energy values also indicate that C54 TiSi₂ formation is favored in capped samples.

Original language	English
Pages (from-to)	65-80
Number of pages	16
Journal	Microelectronic Engineering
Volume	69
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(03)00230-2
State	Published - 1 Aug 2003

Keywords

C54 TiSi
Free energy calculations
Stress effect
TiN capping
TiSi as the first phase

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/S0167-9317(03)00230-2

Cite this

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title = "Formation of C54 TiSi2 in a cosputtered (Ti + Si) blanket film in the presence of a TiN capping layer",

abstract = "Formation of C54 TiSi2 was investigated in cosputtered (Ti + Si) films with and without a TiN capping layer following rapid thermal annealing (RTA). The first phase observed in the specimens was Ti5Si3 regardless if a TiN overlayer was present. Free energy calculations indicate the preference of Ti5Si3 formation as the first phase. C54 TiSi2 started to form at lower temperatures in the specimens capped with TiN. Its formation also occurred at shorter annealing times at some given temperature. The influence of a TiN capping layer on enhancing C54 TiSi2 formation is attributed to the stress induced by this layer into the (Ti+Si) film. The X-ray diffraction (XRD) method was used to evaluate the stress in the TiN film. Free energy values also indicate that C54 TiSi2 formation is favored in capped samples.",

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N2 - Formation of C54 TiSi2 was investigated in cosputtered (Ti + Si) films with and without a TiN capping layer following rapid thermal annealing (RTA). The first phase observed in the specimens was Ti5Si3 regardless if a TiN overlayer was present. Free energy calculations indicate the preference of Ti5Si3 formation as the first phase. C54 TiSi2 started to form at lower temperatures in the specimens capped with TiN. Its formation also occurred at shorter annealing times at some given temperature. The influence of a TiN capping layer on enhancing C54 TiSi2 formation is attributed to the stress induced by this layer into the (Ti+Si) film. The X-ray diffraction (XRD) method was used to evaluate the stress in the TiN film. Free energy values also indicate that C54 TiSi2 formation is favored in capped samples.

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