Current voltage characteristics of narrow-gap Hg1-xCd xTe photodiodes, fabricated on liquid phase epitaxy and metalorganic chemical vapor deposition grown layers, have been investigated. It is shown that the tunneling-recombination process is the dominant mechanism that determines the dark current at forward and at low reverse bias. This mechanism also determines the junction zero-bias resistance.
ASJC Scopus subject areas
- Physics and Astronomy (all)