Forward tunneling current in HgCdTe photodiodes

G. Sarusi, A. Zemel, Ariel Sher, D. Eger

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Current voltage characteristics of narrow-gap Hg1-xCd xTe photodiodes, fabricated on liquid phase epitaxy and metalorganic chemical vapor deposition grown layers, have been investigated. It is shown that the tunneling-recombination process is the dominant mechanism that determines the dark current at forward and at low reverse bias. This mechanism also determines the junction zero-bias resistance.

Original languageEnglish
Pages (from-to)4420-4425
Number of pages6
JournalJournal of Applied Physics
Volume76
Issue number7
DOIs
StatePublished - 1 Dec 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (all)

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