Forward tunneling current in HgCdTe photodiodes

G. Sarusi; A. Zemel; Ariel Sher; D. Eger

doi:10.1063/1.357336

Forward tunneling current in HgCdTe photodiodes

G. Sarusi
, A. Zemel
, Ariel Sher
, D. Eger

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Current voltage characteristics of narrow-gap Hg_1-xCd _xTe photodiodes, fabricated on liquid phase epitaxy and metalorganic chemical vapor deposition grown layers, have been investigated. It is shown that the tunneling-recombination process is the dominant mechanism that determines the dark current at forward and at low reverse bias. This mechanism also determines the junction zero-bias resistance.

Original language	English
Pages (from-to)	4420-4425
Number of pages	6
Journal	Journal of Applied Physics
Volume	76
Issue number	7
DOIs	https://doi.org/10.1063/1.357336
State	Published - 1 Dec 1994
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.357336

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@article{07c620d295e34baca6d0dfe2356ae8c4,

title = "Forward tunneling current in HgCdTe photodiodes",

abstract = "Current voltage characteristics of narrow-gap Hg1-xCd xTe photodiodes, fabricated on liquid phase epitaxy and metalorganic chemical vapor deposition grown layers, have been investigated. It is shown that the tunneling-recombination process is the dominant mechanism that determines the dark current at forward and at low reverse bias. This mechanism also determines the junction zero-bias resistance.",

author = "G. Sarusi and A. Zemel and Ariel Sher and D. Eger",

year = "1994",

month = dec,

day = "1",

doi = "10.1063/1.357336",

language = "English",

volume = "76",

pages = "4420--4425",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Forward tunneling current in HgCdTe photodiodes

AU - Sarusi, G.

AU - Zemel, A.

AU - Sher, Ariel

AU - Eger, D.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Current voltage characteristics of narrow-gap Hg1-xCd xTe photodiodes, fabricated on liquid phase epitaxy and metalorganic chemical vapor deposition grown layers, have been investigated. It is shown that the tunneling-recombination process is the dominant mechanism that determines the dark current at forward and at low reverse bias. This mechanism also determines the junction zero-bias resistance.

AB - Current voltage characteristics of narrow-gap Hg1-xCd xTe photodiodes, fabricated on liquid phase epitaxy and metalorganic chemical vapor deposition grown layers, have been investigated. It is shown that the tunneling-recombination process is the dominant mechanism that determines the dark current at forward and at low reverse bias. This mechanism also determines the junction zero-bias resistance.

UR - https://www.scopus.com/pages/publications/33746664169

U2 - 10.1063/1.357336

DO - 10.1063/1.357336

M3 - Article

AN - SCOPUS:33746664169

SN - 0021-8979

VL - 76

SP - 4420

EP - 4425

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Forward tunneling current in HgCdTe photodiodes

Abstract

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